Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method

V.P. Makhniy; V.V. Melnyk; M.V. Demych

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Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method

机译：等价取代法制备的基于砷化镓异质结的光电探测器

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The results presented here show the principal possibility to use isovalent replacement for creation of photosensitive heterojunctions in a gallium phosphide-arsenide system. Low noise levels together with a high multiplication factor make it possible to use the material obtained for different optical sensors: photodiodes for the spectral ranges of 1.4-2.3 eV, IR light converters, etc. The efficiency of around 2% gained without any optimizations in the absence of antireflection coatings together with high series resistance serves as a significant reserve to improve the device efficiency.

机译：此处给出的结果表明，在磷化镓-砷化物体系中使用等价取代物形成光敏异质结的主要可能性。低噪声水平和高倍增系数使得可以将获得的材料用于不同的光学传感器：光谱范围为1.4-2.3 eV的光电二极管，红外光转换器等。在不进行任何优化的情况下，可获得大约2％的效率。缺少抗反射涂层以及高串联电阻可作为提高设备效率的重要储备。

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来源
《Telecommunications and Radio Engineering》 |2003年第12期|p.138-141|共4页
作者
V.P. Makhniy; V.V. Melnyk; M.V. Demych;
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作者单位

Chernivtsi National University, 2 Kotsiubynsky str., 58012 Chernivtsi, Ukraine;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method

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