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首页> 外文期刊>Terahertz Science and Technology, IEEE Transactions on >Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz
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Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

机译：晶圆上TRL校准与ISS SOLT校准以及高达500 GHz的开放式短解嵌比较

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摘要

Sub-mm circuit design requires accurate on-wafer characterization of passive and active devices. In industry, characterization of these devices is often performed with off-wafer short-open-load-thru (SOLT) calibration. In this paper, the validity of this characterization procedure above 110 GHz is investigated by an exhaustive study of on-wafer and alumina off-wafer calibration using measurement and electromagnetic (EM) simulation up to 500 GHz. The EM simulation is performed at two different levels, first at the intrinsic level of the devices under test for reference and afterward up to the probe level to simulate different standards used in the off-wafer calibration or in the on-wafer calibration in the presence of the probe. Furthermore, EM simulation data are calibrated with the same procedures and tools that are used in the measurement; therefore, it includes the probe-to-substrate coupling. In addition, precise EM model of a commercial impedance standard substrate is developed and used to perform the SOLT calibration. A good agreement is observed between measurement and EM modeling for the off-wafer calibration as well as for the on-wafer calibration. Results clearly highlight a limitation of alumina off-wafer methodology above 200 GHz for characterization of silicon-based technologies. Finally, a discussion is given on the pros and cons of the off-wafer and on-wafer methodologies.
机译：亚毫米电路设计要求对无源和有源器件进行准确的晶圆上特性分析。在工业上，这些器件的表征通常是通过晶圆短开负载直通（SOLT）校准进行的。在本文中，通过对高达500 GHz的测量和电磁（EM）仿真的晶片上和氧化铝晶片下标定的详尽研究，研究了110 GHz以上表征方法的有效性。 EM仿真是在两个不同的级别上执行的，首先是在被测设备的固有级别上作为参考，然后是探针级别，以模拟在场外校准或在场内校准中使用的不同标准。探针此外，使用与测量中相同的程序和工具对EM仿真数据进行校准。因此，它包括探针到基底的耦合。另外，开发了商业阻抗标准基板的精确EM模型，并将其用于执行SOLT校准。对于晶圆外校准以及晶圆上校准，在测量和EM建模之间观察到了很好的一致性。结果清楚地表明了200 GHz以上的氧化铝晶片法对硅技术表征的局限性。最后，讨论了晶片外方法和晶片上方法的优缺点。

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