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Non-volatile resistance switching properties of PbTiO_3 based metal-ferroelectric-semiconductor structures

机译：基于PbTiO_3的金属铁电半导体结构的非易失性电阻转换特性

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Ferroelectric tunneling junctions (FTJs) based on tunneling electroresistance have great potential in non-volatile memory applications. The resistance states can be modulated by electric field and the switching property is nonvolatile in the FTJs. In this work, a 10-nm-thick PbTiO3 (PTO) was epitaxially grown on Nb doped SrTiO3 (NSTO) substrates to form Al/PTO/NSTO metal-ferroelectric-semiconductor structures (MFS). The non-volatile resistance switching in our MFS was demonstrated by electrical measurement. By fitting different conduction models, the electron transport was dominated by both barrier tunneling and defects, which was a mixture of interface effect and bulk effect. Such mechanism is quite different from the electroresistance based FTJs. The resistance switch is controlled by both polarization charge and structure defects. This result may expand the application of the MFS structures.
机译：基于隧穿电阻的铁电隧穿结（FTJ）在非易失性存储应用中具有巨大的潜力。电阻状态可以通过电场进行调制，并且开关特性在FTJ中是非易失性的。在这项工作中，在掺Nb的SrTiO3（NSTO）衬底上外延生长了10nm厚的PbTiO3（PTO），以形成Al / PTO / NSTO金属铁电半导体结构（MFS）。通过电气测量证明了我们的MFS中的非易失性电阻开关。通过拟合不同的传导模型，电子传输受势垒隧穿和缺陷的支配，这是界面效应和体积效应的混合。这种机制与基于电阻的FTJ完全不同。电阻开关受极化电荷和结构缺陷的控制。此结果可能会扩展MFS结构的应用。

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