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首页> 外文期刊>Thin Solid Films >Poly(2-hydroxyethyl methacrylate) brushes synthesized by atom transfer radical polymerization from gold surface as a gate insulator in organic thin- film transistors
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Poly(2-hydroxyethyl methacrylate) brushes synthesized by atom transfer radical polymerization from gold surface as a gate insulator in organic thin- film transistors

机译：通过原子转移自由基聚合从金表面合成的聚（2-羟乙基甲基丙烯酸酯）刷作为有机薄膜晶体管中的栅极绝缘体

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摘要

Poly(2-hydroxyethyl methacrylate) brushes were grown from a gold substrate by Atom Transfer Radical Polymerization (ATRP) and the material was applied as the gate dielectric layer in Organic Thin Film Transistor (OTFT) devices. The ATRP method provided 120 nm thick layers with relatively low roughness, as characterized by Atomic Force Microscopy. The layers were also investigated by Fourier Transform Infrared Spectroscopy to confirm that the polymer layer was covalently bonded to the gold surface. The synthesized polymer had very low dispersity, D = 1.18, indicating the well-controlled polymerization process. Dielectric Spectroscopy was used to characterize dielectric properties of the layers for potential use as the gate dielectric in OTFTs. Then, an OTFT device was subsequently constructed by deposition of a pentacene derivative as the semiconductor on the dielectric layer. The OTFT exhibits a field-effect for a relatively low operational voltage range (V-DS 30 V and V-GS 15 V). This study demonstrates that the ultrathin layers of polymer brushes grown by ATRP can be integrated into organic electronic devices such as OTFTs.
机译：通过原子转移自由基聚合（ATRP）从金基板上生长出聚甲基丙烯酸2-羟乙酯刷，并将该材料用作有机薄膜晶体管（OTFT）器件中的栅极介电层。如原子力显微镜所表征的，ATRP方法提供了具有相对低粗糙度的120nm厚的层。还通过傅立叶变换红外光谱研究了这些层，以确认聚合物层共价键合至金表面。合成的聚合物具有非常低的分散度，D = 1.18，表明聚合过程得到了很好的控制。介电谱用于表征各层的介电性能，可作为OTFT中的栅极电介质。然后，随后通过在绝缘层上沉积并五苯衍生物作为半导体来构造OTFT器件。 OTFT在相对较低的工作电压范围（V-DS <30 V和V-GS <15 V）下表现出场效应。这项研究表明，由ATRP生成的聚合物刷的超薄层可以集成到有机电子设备中，例如OTFT。

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