A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se_2 solar cell

Suresh S.; de Wild J.; Kohl T.; Buldu D. G.; Brammertz G.; Meuris M.; Poortmans J.; Isabella O.; Zeman M.; Vermang B.

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A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se_2 solar cell

机译：改善薄Cu（In，Ga）Se_2太阳能电池的光限制和背面钝化的研究

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Reducing the absorber layer thickness below 1 mu m for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.

机译：对于常规的铜铟镓硒化铜（CIGS）太阳能电池，将吸收层的厚度减小到1μm以下，由于电子扩散长度较短，因此降低了吸收层的最低质量要求。另外，它减少了材料成本和生产时间。然而，具有这样的薄吸收体会显着降低电池效率。这是由于不完全的光吸收和较高的钼/ CIGS背面复合[1]。这项研究的目的是在430 nm厚的CIGS吸收层上进行一些创新的后表面改性，以减少这两种影响：氧化铝钝化层，以减少背面复合和使用纳米粒子进行电接触的点接触孔。本文将讨论并分析所有这些后表面修饰的实施对CIGS太阳能电池的光电性能的影响。

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《Thin Solid Films》 |2019年第1期|399-403|共5页
作者
Suresh S.; de Wild J.; Kohl T.; Buldu D. G.; Brammertz G.; Meuris M.; Poortmans J.; Isabella O.; Zeman M.; Vermang B.;
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Hasselt Univ Partner Solliance & EnergyVille, Inst Mat Res IMO, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium;

Imec Partner Solliance & EnergyVille, Kapeldreef 75, B-3001 Leuven, Belgium;

Delft Univ Technol, Photovolta Mat & Devices Lab, Mekelweg 4, NL-2628 CD Delft, Netherlands;

Imec Div IMOMEC Partner Solliance & EnergyVille, Wetenschapspk 1, B-3590 Diepenbeek, Belgium;

Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg Band10, B-3001 Heverlee, Belgium;

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1. Effect of rear-surface buffer layer on performance of lift-off Cu(In,Ga)Se_2 solar cells [J] . Kenta Aoyagi, Akihiro Tamura, Hideyuki Takakura, Japanese journal of applied physics . 2014,第5S1期

机译：后表面缓冲层对剥离型Cu（In，Ga）Se_2太阳能电池性能的影响
2. Comparison of lift-off processes and rear-surface characterization of Cu(In,Ga)Se_2 thin films for solar cells [J] . T. Anegawa, Y. Oda, T. Minemoto, Journal of Crystal Growth . 2009,第3期

机译：太阳能电池用Cu（In，Ga）Se_2薄膜的剥离工艺和背面表征的比较
3. A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe_2 and Cu(In,Ga)Se_2 thin-film solar cells [J] . Ishizuka Shogo, Taguchi Noboru, Nishinaga Jiro, Solar Energy . 2020,第Pta2期

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4. Bifacial Cu(In,Ga)Se_2 solar cells with submicron absorber thickness: Back-contact passivation and light management [C] . Wiebke Ohm, Wiebke Riedel, Umit Aksünger, IEEE Photovoltaic Specialist Conference . 2015

机译：双相CU（IN，GA）SE_2具有亚微米吸收器厚度的太阳能电池：背面接触钝化和光管理
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6. TiO2 Passivation Layer on ZnO Hollow Microspheres for Quantum Dots Sensitized Solar Cells with Improved Light Harvesting and Electron Collection [O] . Zhen Li, Libo Yu, Hao Wang, 2020

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7. A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell [O] . S. Suresh, J. de Wild, T. Kohl, 2019

机译：一种改进薄Cu（GA）SE2太阳能电池中的光限制和后表面钝化的研究

A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se_2 solar cell

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