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首页> 外文期刊>Thin Solid Films >Structural, electronic and optical properties of pulsed laser deposited Cu_2SnS_3 photo absorber thin films: A combined experimental and computational study
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Structural, electronic and optical properties of pulsed laser deposited Cu_2SnS_3 photo absorber thin films: A combined experimental and computational study

机译：脉冲激光沉积Cu_2SnS_3光吸收薄膜的结构，电学和光学性质：实验与计算研究相结合

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摘要

Pulsed laser deposited thin films of Cu2SnS3 (CTS) are characterized for the structural, electronic and optical properties using X-ray diffraction, Raman, UV-Vis-NIR spectroscopy, scanning electron microscopic techniques, and density functional theory. It is observed that thin-film samples annealed at low temperature have a metastable tetragonal structure, whereas the films annealed at 450 degrees C have a predominant stable monoclinic phase. A direct band gap of 1.1 eV, measured from the transmittance spectra, in close agreement with the theoretical band gap value of 0.89 eV obtained from density functional theory calculations. Optical properties reveal that CTS has a large absorption coefficient similar to 0.5 x 10(4) cm(-1) at 1.5 eV which is comparable to other Cu-S based materials like CuInS2 and Cu2ZnSnS4. The direct band gap and large absorption coefficient make CTS as one of the potential alternative absorber materials for thin-film solar cell applications.
机译：使用X射线衍射，拉曼光谱，UV-Vis-NIR光谱，扫描电子显微镜技术和密度泛函理论对Cu2SnS3（CTS）脉冲激光沉积薄膜的结构，电子和光学特性进行了表征。观察到在低温下退火的薄膜样品具有亚稳态的四方结构，而在450℃下退火的膜具有主要的稳定单斜晶相。由透射光谱测得的直接带隙为1.1 eV，与从密度泛函理论计算中获得的理论带隙值0.89 eV紧密一致。光学性质表明，CTS在1.5 eV时具有大的吸收系数，类似于0.5 x 10（4）cm（-1），可与其他基于Cu-S的材料如CuInS2和Cu2ZnSnS4媲美。直接带隙和大吸收系数使CTS成为薄膜太阳能电池应用的潜在替代吸收材料之一。

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