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首页> 外文期刊>Thin Solid Films >Effect of annealing time on the structural and optical properties of n-CuO thin films deposited by sol-gel spin coating technique and its application in n-CuO/p-Si heterojunction diode
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Effect of annealing time on the structural and optical properties of n-CuO thin films deposited by sol-gel spin coating technique and its application in n-CuO/p-Si heterojunction diode

机译：退火时间对溶胶-凝胶旋涂技术沉积n-CuO薄膜结构和光学性能的影响及其在n-CuO / p-Si异质结二极管中的应用

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摘要

This paper reports the growth of n-type CuO (copper II oxide) thin film with improved crystallinity on p-Si substrate using sol-gel spin coating process. The electrical conductivity of the deposited film was determined as n-type using Hot point probe measurement. Further, an in-depth analysis of the annealing time effect on the deposited thin film was done to observe its structural and optical properties. The structural characterization of the deposited film was done with the help of X-ray diffraction and Field Emission Scanning electron microscope. The optical parameters, such as reflectance, refractive index were determined in the spectral range of 300 nm 800 nm with the help of ellipsometry. The effects of annealing time on band gap, extinction coefficient, dielectric constant for the annealed films were also extracted to observe its application for optoelectronic devices. Further, using the film annealed for 15 mins. n-CuO/p-Si hetero-junction diode was fabricated and characterized. The experimentally obtained electrical parameters of the fabricated n-CuO/p-Si hetero-junction diode were also validated by the results of numerical simulation data obtained by usinga commercially available device simulator. The developed hetero-junction was investigated by considering a conventional thermionic model. It showed high rectification ratio equal to 6805 and a barrier height equal to 0.81 eV.
机译：本文报道了使用溶胶-凝胶旋涂工艺在p-Si衬底上生长具有改善结晶度的n型CuO（铜II氧化物）薄膜的方法。使用热点探针测量将沉积膜的电导率确定为n型。此外，对退火时间对沉积的薄膜的影响进行了深入分析，以观察其结构和光学性质。借助X射线衍射和场发射扫描电子显微镜对沉积膜的结构进行了表征。借助椭偏法在300 nm至800 nm的光谱范围内确定了光学参数，例如反射率，折射率。还提取了退火时间对退火薄膜的带隙，消光系数，介电常数的影响，以观察其在光电器件中的应用。此外，使用退火15分钟的膜。制备并表征了n-CuO / p-Si异质结二极管。通过使用市售的设备模拟器获得的数值模拟数据的结果，也验证了所制造的n-CuO / p-Si异质结二极管的实验获得的电参数。通过考虑常规热电子模型研究了发达的异质结。它显示出高的整流比等于6805和势垒高度等于0.81 eV。

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  • 来源
    《Thin Solid Films》 |2019年第1期|195-203|共9页
  • 作者

    Singh Richa; Yadav Lalu; Shrey; Tripathi Shweta;

  • 作者单位

    Motilal Nehru Natl Inst Technol, Dept Elect & Commun Engn, Allahabad 211004, Uttar Pradesh, India;

    Motilal Nehru Natl Inst Technol, Dept Elect & Commun Engn, Allahabad 211004, Uttar Pradesh, India;

    Motilal Nehru Natl Inst Technol, Dept Elect & Commun Engn, Allahabad 211004, Uttar Pradesh, India;

    Motilal Nehru Natl Inst Technol, Dept Elect & Commun Engn, Allahabad 211004, Uttar Pradesh, India;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Copper oxide; Thin film; Sol-gel; X-ray diffraction; Ultraviolet spectroscopy; Photoluminescence;

    机译：氧化铜;薄膜;溶胶 - 凝胶;X射线衍射;紫外光谱;光致发光;

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