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Preparation and characterization of molybdenum disulfide films obtained by one-step atomic layer deposition method

机译：一步原子层沉积法制备的二硫化钼薄膜的制备与表征

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摘要

High crystalline MoS2 films are prepared by one-step ALD without followed high-temperature annealing. MoCl5 and H2S are used as precursors, while Si and Al2O3 are used as substrates respectively. The obtained MoS2 films are characterized by Atomic Force Microscopy (AFM), Raman spectroscopy, Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), indicating they possess structures in high quality. Experimental results demonstrate the film grain sizes can be tuned from similar to 20 nm to similar to 100 nm at various growth temperatures from 420 degrees C to 480 degrees C and excellent crystal performance can be guaranteed from 430 degrees C to 470 degrees C. Meanwhile, the growth temperature should not exceed 480 degrees C due to decomposition of the functional groups. Furthermore, Al2O3 can do better than Si as a substrate for the film building for more necessary hydroxyls during initial reaction on its surface. The average growth rate of the high crystallinity MoS2 film is similar to 4.3 angstrom/cycle for Al2O3 substrate and -3.8 angstrom/cycle for Si substrate. (C) 2017 Elsevier B.V. All rights reserved.
机译：高结晶MoS2膜是通过一步ALD制备的，无需进行高温退火。 MoCl5和H2S用作前体，而Si和Al2O3分别用作衬底。所获得的MoS 2膜通过原子力显微镜（AFM），拉曼光谱，透射电子显微镜（TEM），扫描电子显微镜（SEM），X射线衍射（XRD）进行表征，表明它们具有高质量的结构。实验结果表明，在从420摄氏度到480摄氏度的各种生长温度下，膜的晶粒尺寸可以从大约20 nm调整到近似100 nm，并且可以在430摄氏度至470摄氏度的条件下保证出色的晶体性能。由于官能团的分解，生长温度不应超过480℃。此外，Al2O3可以比Si更好地作为膜的基材，以在其表面上进行初始反应期间形成更多必要的羟基。对于Al 2 O 3衬底，高结晶度MoS 2膜的平均生长速率类似于4.3埃/循环，对于Si衬底，其平均生长速度类似于-3.8埃/循环。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Thin Solid Films》 |2017年第28期|101-105|共5页
  • 作者

    Huang Yazhou; Liu Lei; Zhao Weiwei; Chen Yunfei;

  • 作者单位

    Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Mfg Micronano Biomed Ins, Nanjing 210096, Jiangsu, Peoples R China;

    Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Mfg Micronano Biomed Ins, Nanjing 210096, Jiangsu, Peoples R China;

    Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Mfg Micronano Biomed Ins, Nanjing 210096, Jiangsu, Peoples R China;

    Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Mfg Micronano Biomed Ins, Nanjing 210096, Jiangsu, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    Atomic layer deposition; MoS2 thin film; Growth temperature; Substrate; Crystal structure;

    机译：原子层沉积;MoS2薄膜;生长温度;衬底;晶体结构;

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