Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

Huang S. W.; Chang C. C.; Lin H. Y.; Li X. F.; Lin Y. C.; Liu C. Y.

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Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

机译：在c面蓝宝石衬底上使用自组装网状Pt薄膜制作纳米腔图案化蓝宝石衬底

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In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaNc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate. (C) 2017 Elsevier B.V. All rights reserved.

机译：在这项工作中，通过在c面蓝宝石衬底上使用自成网状的Pt薄膜，制作了纳米腔图案化的蓝宝石衬底（nc-PSS）。 nc-PSS上的GaN基发光二极管的光输出功率比在平面c面蓝宝石衬底（f-SS）晶圆上制备的控制发光二极管的光输出功率大45％。与在商用半球形蓝宝石衬底（r-PSS）上制备的GaN基发光二极管相比，在nc-PSS上制备的GaN基发光二极管的下垂率要低得多，这主要是因为空隙在GaN / nc-PSS界面处的腔中形成的应力缓冲了蓝宝石衬底在GaN外延层中产生的应力。（C）2017 Elsevier B.V.保留所有权利。

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来源
《Thin Solid Films》 |2017年第30期|127-131|共5页
作者
Huang S. W.; Chang C. C.; Lin H. Y.; Li X. F.; Lin Y. C.; Liu C. Y.;
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Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan;

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正文语种 eng
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Nano-cavities; Quantum wells; Gallium nitride; Light emitting diodes;

机译：纳米腔;量子阱;氮化镓;发光二极管;

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专利

1. Measurement of dielectric constant of R-, A-, C-plane sapphire substrates and fabrication of YBCO thin films on these substrates [J] . Masanobu Shirakawa, Shinobu Watanabe, Keiji Aizawa, 電子情報通信学会技術研究報告. 超伝導エレクトロニクス . 2003,第20期

机译：R，A，C平面蓝宝石衬底的介电常数的测量以及在这些衬底上制备YBCO薄膜
2. Measurement of dielectric constant of R-, A-, C-plane sapphire substrates and fabrication of YBCO thin films on these substrates [J] . Masanobu Shirakawa, Shinobu Watanabe, Keiji Aizawa, 電子情報通信学会技術研究報告. マイクロ波. Microwaves . 2003,第21期

机译：R，A，C平面蓝宝石衬底的介电常数的测量以及在这些衬底上制备YBCO薄膜
3. Measurement of dielectric constant of R-, A-, C-plane sapphire substrates and fabrication of YBCO thin films on these substrates [J] . Masanobu Shirakawa, Shinobu Watanabe, Keiji Aizawa, 電子情報通信学会技術研究報告. 超伝導エレクトロニクス . 2003,第20期

机译：在这些基板上的R-，A-，C平面蓝宝石基板的介电常数测量这些基板上的YBCO薄膜的制造
4. Ilmenite-hematite Solid Solution Thin Films with Atomically Smooth Surface Grown on C-plane Sapphire Substrates [C] . Tomohiko Matoba, Koji Fujita, Shunsuke Murai Materials Science Technology Conference and Exhibition . 2013

机译：钛铁矿 - 赤铁矿固溶薄膜，具有原子平滑表面在C平面蓝宝石基材上生长
5. Optical characterization of lithium niobate thin film waveguides sputtered on sapphire substrates. [D] . Huang, Hung-Jia. 1991

机译：溅射在蓝宝石衬底上的铌酸锂薄膜波导的光学特性。
6. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography [O] . Lin Cui, Jie-Cai Han, Gui-Gen Wang, 2013

机译：通过软紫外-纳米压印光刻技术对图案化的Al薄膜进行退火处理大规模制造纳米图案化的蓝宝石衬底
7. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography [O] . Lin Cui, Jie-Cai Han, Gui-Gen Wang, 2013

机译：通过软紫外-纳米压印光刻技术对图案化的Al薄膜进行退火处理，大规模制造纳米图案化的蓝宝石衬底

Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

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