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Quantum efficiency modeling of thin film solar cells under biased conditions with a case study of CZTSSe solar cells

机译:偏置条件下薄膜太阳能电池的量子效率建模-以CZTSSe太阳能电池为例

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We have modeled the quantum efficiency of thin film solar cell devices with a case study of kesterite solar cells under a set of biased conditions with SCAPS device simulator. This study reveals that the carrier collection with deep acceptor type defect distribution above and below 0.3eV from the midgap near the heterojunction interface is pronounced at particular wavelength regions, (500-550nm) at particular biased conditions, (0.2-0.25V). Specifically, these acceptor type defect states influence kesterite spectral responses of red and infrared light wavelength regions in quantum efficiency caused by affected space charge region width toward the back contact. As a result, the intensified drop of quantum efficiency occurs at 550nm at forward bias (0.25V) with a peak spectral response near 520nm to 530nm. This numerical model elucidates the probable loss mechanism to account for a deficit in open circuit voltage by taking into account of voltage and light bias models. (C) 2016 Elsevier B.V. All rights reserved.
机译:我们使用SCAPS器件模拟器,在一组有偏条件下,以硅藻土太阳能电池为例,对薄膜太阳能电池器件的量子效率进行了建模。这项研究表明,在特定的偏置条件(0.2-0.25V)下,在特定的波长区域(500-550nm),载流子在接近异质结界面处的中间间隙处具有0.3eV上下的深受体类型缺陷分布。具体来说,这些受主类型的缺陷状态会影响量子电荷效率,从而影响红光和红外光波长区域的硅藻土光谱响应,这是由于受影响的空间电荷区域宽度朝向背接触而引起的。结果,在前向偏置(0.25V)下在550nm处出现的量子效率增强下降,峰值光谱响应在520nm至530nm附近。该数值模型阐明了通过考虑电压和光偏置模型来解决开路电压不足的可能的损耗机制。 (C)2016 Elsevier B.V.保留所有权利。

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