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首页> 外文期刊>Thin Solid Films >The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
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The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响

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摘要

One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline qualities, surface morphologies, and dislocation densities of the samples were investigated using high resolution transmission electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. Some of the data provided by these measurements were used as input parameters in the calculation of the scattering mechanisms that govern the transport properties of the studied samples. Experimental transport data were obtained using temperature dependent Hall effect measurements (10-300 K) at low (0.5 T) and high (8 T) magnetic fields to exclude the bulk transport from the two-dimensional one. The effect of the thickness of the second GaN layer inserted between two AlN barrier layers on mobility and carrier concentrations was analyzed and the dominant scattering mechanisms in the low and high temperature regimes were determined. It was found that Hall mobility increases as the thickness of GaN increases until 5 nm at a low temperature where interface roughness scattering is observed as one of the dominant scattering mechanisms. When GaN thicknesses exceed 5 nm, Hall mobility tends to decrease again due to the population of the second channel in which the interface becomes worse compared to the other one. From these analyses, 5 nm GaN layer thicknesses were found to be the optimum thicknesses required for high electron mobility.
机译：研究了一个具有两个不同值的第二GaN层的AlInN / AlN / GaN单通道异质结构样品和四个AlInN / AlN / GaN / AlN / GaN双通道异质结构样品。使用高分辨率透射电子显微镜，原子力显微镜和高分辨率X射线衍射研究了样品的界面轮廓，晶体质量，表面形态和位错密度。这些测量提供的某些数据在控制研究样品传输特性的散射机制的计算中用作输入参数。实验性运输数据是通过在低（0.5 T）和高（8 T）磁场下使用温度相关霍尔效应测量（10-300 K）获得的，以将大量运输从二维磁场中排除。分析了插入在两个AlN势垒层之间的第二GaN层的厚度对迁移率和载流子浓度的影响，并确定了低温和高温条件下的主要散射机制。已发现在低温下霍尔迁移率随GaN厚度的增加而增加，直到5 nm，在该温度下，界面粗糙度散射是主要的散射机制之一。当GaN的厚度超过5 nm时，霍尔迁移率趋于再次下降，这是由于第二个通道的界面比另一个通道更差。通过这些分析，发现5 nm GaN层厚度是高电子迁移率所需的最佳厚度。

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  • 来源
    《Thin Solid Films》 |2014年第31期|146-152|共7页
  • 作者

    R. Tuelek; E. Arslan; A. Bayrakli; S. Turhan; S. Goekden; OE. Duygulu; A.A. Kaya; T. Firat; A. Teke; E. OEzbay;

  • 作者单位

    Department of Physics, Faculty of Science and Letters, Balikesir University, Cagis Kampuesue, 10145 Balikesir, Turkey;

    Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research Center-NANOTAM, Bilkent University, 06800 Ankara, Turkey;

    Department of Physics Engineering, Faculty of Engineering, Hacettepe University, 06800 Ankara, Turkey;

    Department of Physics, Faculty of Science and Letters, Balikesir University, Cagis Kampuesue, 10145 Balikesir, Turkey;

    Department of Physics, Faculty of Science and Letters, Balikesir University, Cagis Kampuesue, 10145 Balikesir, Turkey;

    TUBITAK Marmara Research Center, Materials Institute, PO Box 21, Gebze, 41470 Kocaeli, Turkey;

    Mugla University, Engineering Faculty, Department of Metallurgy and Materials Engineering, 48000 Mugla, Turkey;

    Department of Physics Engineering, Faculty of Engineering, Hacettepe University, 06800 Ankara, Turkey;

    Department of Physics, Faculty of Science and Letters, Balikesir University, Cagis Kampuesue, 10145 Balikesir, Turkey;

    Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research Center-NANOTAM, Bilkent University, 06800 Ankara, Turkey;

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  • 正文语种 eng
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  • 关键词

    AlInN/GaN single; Double channel; Transport;

    机译：AlInN / GaN单;双通道;运输;

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