High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure

著录项

• 来源
  《Thin Solid Films》 |2013年第1期|421-425|共5页
• 作者

  Chao-Lung Wang; I-Che Lee; Chun-Yu Wu; Yu-Ting Cheng; Po-Yu Yang; Huang-Chung Cheng;

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• 作者单位

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  excimer laser crystallization (ELC); polycrystalline silicon; prepatterned; thin-film transistors (TFTs);

  机译：准分子激光结晶（ELC）;多晶硅预先设定薄膜晶体管（TFT）;