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In situ ellipsometric study of copper growth on silicon

机译：硅上铜生长的原位椭偏研究

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Thin copper films are of high interest for interconnect applications. However, optical studies, such as ellipsometry, of metallic thin films are still rare as the measurements are difficult to interpret due to the lack of a transparent range and often island-like growth at very low coverages. We investigated by in situ spectroscopic ellipsometry the growth of thermally evaporated thin copper films on silicon substrates from 0.5 nm to more than 100 nm, a thickness for which bulk-like response is observed. A strong change in the optical response was observed for films thinner than 10 nm as a result of plasmonic effects. The data at each thickness was modeled by employing the effective medium approximation theory. Besides the layer thickness and the void filling fraction, giving the film density, we obtained information about the mean free path of electrons in the thin films and compared it to single crystals. Cu oxidation was studied by deliberately introducing oxygen or air in the chamber, leading to a fast and pronounced change in the optical response. The data analysis provides detailed information on film thickness and quality.
机译：铜薄膜对于互连应用非常感兴趣。但是，由于缺乏透明范围，并且在极低的覆盖率下通常呈岛状生长，因此难以解释测量结果，因此对金属薄膜的光学研究（例如椭圆偏振法）仍然很少。我们通过原位光谱椭圆偏光法研究了硅衬底上热蒸发的铜薄膜从0.5 nm到100 nm以上的生长情况，该厚度可观察到块状响应。由于等离子体效应，对于小于10 nm的薄膜，观察到了光学响应的​​强烈变化。每个厚度的数据均采用有效介质近似理论建模。除了给出膜密度的层厚度和空隙填充率以外，我们还获得了有关薄膜中电子平均自由程的信息，并将其与单晶进行了比较。通过在腔室中故意引入氧气或空气来研究铜的氧化，从而导致光学响应快速而明显地变化。数据分析提供了有关膜厚和质量的详细信息。

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