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首页> 外文期刊>Thin Solid Films >Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition
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Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition

机译：等离子体增强化学气相沉积法双钝化效应优化γ栅AlGaN / GaN高电子迁移率晶体管的直流性能

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摘要

Two different materials for double passivation layers have been implemented to an AlGaN/GaN high electron mobility transistor on Si (111) substrate and the improved DC properties are demonstrated. Si_3N_4 and SiO_2 passivation materials are deposited on the gamma gate upper and bottom layers by plasma enhanced chemical vapor deposition. The gamma shape gate can be made by selectively accurate Si_3N_4 or SiO_2 first passivation dry etching with wet etching. The second passivation on gamma gate effectively increases the DC properties. The effects of DC properties of Si_3N_4 or SiO_2 single passivation and Si_3N_4/Si_3N_4 or SiO_2/SiO_2 double passivations are compared. The Si_3N_4/Si_3N4 double passivation shows the maximum saturation current density and the peak extrinsic transconductance which increases up to 72% and 18%, respectively, more than Si_3N_4 single passivation and also up to 18% and 5% than SiO_2/SiO_2 double passivation.
机译：两种不同的双钝化层材料已在Si（111）基板上实现了AlGaN / GaN高电子迁移率晶体管，并展示了改进的DC特性。通过等离子体增强化学气相沉积将Si_3N_4和SiO_2钝化材料沉积在伽马栅极上层和底层上。可以通过选择性地精确地进行Si_3N_4或SiO_2第一次钝化干法刻蚀和湿法刻蚀来制作伽马形栅极。伽马栅极上的第二次钝化有效地提高了直流特性。比较了Si_3N_4或SiO_2单钝化和Si_3N_4 / Si_3N_4或SiO_2 / SiO_2双钝化的直流特性的影响。 Si_3N_4 / Si_3N4双重钝化显示出最大的饱和电流密度和峰值非本征跨导，分别比Si_3N_4单一钝化增加了72％和18％，比SiO_2 / SiO_2双重钝化增加了18％和5％。

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