...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon
【24h】

Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon

机译：氧化处理对多孔硅弹道电子表面发射显示器的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler-Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.
机译：两组多孔硅（PS）样品分别通过快速热氧化（RTO）和电化学氧化（ECO）处理。扫描电子显微镜图像显示PS样品分为两层。氧化膜层形成在经RTO处理的PS样品的上表面，而在经ECO处理的PS样品的底部。 ECO和RTO处理都可以使PS的发射电流密度，二极管电流密度和PS的发射效率随着偏置电压的增加而增加。 RTO处理的PS样品的发射电流密度和场发射增强因子β大于ECO处理的。 RTO和ECO样品的Fowler-Nordheim曲线是线性的，这表明无论是用RTO还是ECO处理PS，氧化层上都存在高电场，并且发生场发射。

著录项

  • 来源
    《Thin Solid Films》 |2012年第2012期|222-225|共4页
  • 作者

    Wentao Du; Xiaoning Zhang; Yujuan Zhang; Wenjiang Wang; Xiaotao Duan;

  • 作者单位

    Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China;

    Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China;

    Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China;

    Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China;

    Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    porous silicon; scanning electron microscope; rapid thermal oxidation; electrochemical oxidation;

    机译：多孔硅扫描电子显微镜;快速热氧化;电化学氧化;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号