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Dye-sensitized solar cells with TiO_2 nanocrystalline films prepared by conventionaland rapid thermal annealing processes

机译:通过常规和快速热退火工艺制备的具有TiO_2纳米晶膜的染料敏化太阳能电池

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摘要

Titanium oxide (TiO_2) thin films are prepared by the sol-gel method and annealed at 600 ℃ by conventional (CTA) and rapid thermal annealing (RTA) processes on fluorine-doped tin oxide -coated glass substrates for application as the work electrode for the dye-sensitized solar cells (DSSC). TiO_2 thin films are crystallized using a conventional furnace and the proposed RTA process at annealing rates of 5 ℃min~(-1) and 600 ℃min~(-1), respectively. The TiO_2 thin films are characterized by X-ray diffraction, scanning electron microscopy and Brunauer-Emmett-Teller analysis. Based on the results, the TiO_2 films crystallized by RTA show better crystallization, higher porosity and larger surface area than those of CTA. The short-circuit photocurrent and open-circuit voltage values increased from 5.2 mAcm~(-2) and 0.6 V for the DSSC with the CTA-derived TiO_2 films to 8.3 mAcm~(-2) and 0.68 V, respectively, for the DSSC containing RTA-derived TiO_2 films.
机译:采用溶胶-凝胶法制备二氧化钛(TiO_2)薄膜,并通过常规(CTA)和快速热退火(RTA)工艺在掺氟氧化锡涂层的玻璃基板上于600℃退火,以用作工作电极。染料敏化太阳能电池(DSSC)。 TiO_2薄膜使用常规炉和建议的RTA工艺分别在5℃min〜(-1)和600℃min〜(-1)的退火速率下结晶。 TiO_2薄膜的特征在于X射线衍射,扫描电子显微镜和Brunauer-Emmett-Teller分析。结果表明,与CTA相比,RTA结晶的TiO_2薄膜具有更好的结晶性,更高的孔隙率和更大的表面积。短路光电流和开路电压值从CTA衍生的TiO_2薄膜的DSSC的5.2 mAcm〜(-2)和0.6 V分别增加到DSSC的8.3 mAcm〜(-2)和0.68 V包含RTA衍生的TiO_2薄膜。

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