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Raman spectroscopy of Culn_(1-X)Ga_xSe_2 for in-situ monitoring of the composition ratio

机译:Culn_(1-X)Ga_xSe_2的拉曼光谱用于原位监测组成比

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摘要

Metal organic vapor deposition (MOCVD) is a well known method for preparing high quality and large area Culn_(1-x)Ga_xSe_2 (CIGS) absorber layers. Some in-situ non-contact monitoring systems are needed when CIGS absorber layers are manufactured in industry. In this study, CuInSe_2 (CIS) and CIGS thin films with different composition ratios, [Cu]/[In + Ga], were prepared by MOCVD using [Me_2In(the In-Se single source, Cu, Ga and Se precursors, respectively. The Raman shift spectra of the films with various composition ratios were analyzed to produce a basic algorithm that can determine the composition ratios of CIS and CIGS thin films indirectly.
机译:金属有机气相沉积(MOCVD)是一种用于制备高质量和大面积Culn_(1-x)Ga_xSe_2(CIGS)吸收层的方法。在工业上制造CIGS吸收层时,需要一些原位非接触式监测系统。在这项研究中,使用[Me_2In(In-Se单一来源,Cu,Ga和Se的前体)分别通过MOCVD制备了具有不同组成比[Cu] / [In + Ga]的CuInSe_2(CIS)和CIGS薄膜。分析了不同组成比的薄膜的拉曼位移谱,得出了可以间接确定CIS和CIGS薄膜的组成比的基本算法。

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