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首页> 外文期刊>Thin Solid Films >Photoelectrochemical properties of anodic silver sulphide thin films
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Photoelectrochemical properties of anodic silver sulphide thin films

机译：阳极硫化银薄膜的光电化学性能

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摘要

We have investigated the semi-conducting properties and photoelectrochemical characterization of Ag_2S thin films electrodeposited galvanostatically onto silver substrate from alkaline S~(2-) bath. Films grown with a low current density not exceeding 20 uA cm"2 are uniform and well adhered. An optimal thickness of 1.34 靘 has been determined. At high current density, oxygen evolution occurs simultaneously and provokes crashing of films. From photoelectrochemical measurements, the band gap was found to be 1.85 eV and the transition is indirectly allowed. The Mott-Schottky plot exhibits a linear behavior, characteristic of n-type conductivity, from which a flat band potential of -1.20 V_(sce) and a donor density of 5.63 The conduction band, located at 3.28 eV, is made up of mainly Ag-5s wave function. Ag_2S is long lived and under illumination, it is stabilized by holes consumption reactions involving S_n~(2-)/S~(2-) redox couple. A conversion efficiency of 1.1% and a fill factor of 0.27 have been obtained. The electrochemical impedance spectroscopy, measured over a wide frequency range (10~(-2)-10~5 Hz), reveals contribution of the bulk effect. The experimental data are modeled by shifting the centre of the semi-circle down the real axis and interpreted in terms of constant phase element due mainly to the porosity and inhomogeneity of the film.
机译：我们已经研究了从碱性S〜（2-）浴中恒电流电沉积到银基底上的Ag_2S薄膜的半导体性能和光电化学特性。在不超过20 uA cm“ 2的低电流密度下生长的薄膜是均匀且粘附良好的。确定的最佳厚度为1.34.。在高电流密度下，同时发生氧气逸出并引起薄膜崩溃。根据光电化学测量，发现带隙为1.85 eV，可以间接允许跃迁，Mott-Schottky图显示出线性行为，具有n型电导率特性，从中可以得到-1.20 V_（sce）的平坦带电势和5.63导带位于3.28 eV处，主要由Ag-5s波函数组成，Ag_2S寿命长且在光照下，通过涉及S_n〜（2-）/ S〜（2-）的空穴消耗反应而稳定。氧化还原对，转换效率为1.1％，填充系数为0.27，在宽频率范围（10〜（-2）-10〜5 Hz）上测得的电化学阻抗谱显示了体积效应的贡献实验数据通过以下方式建模将半圆的中心沿实轴向下移动，并根据恒定相位元素来解释，这主要是由于薄膜的孔隙率和不均匀性所致。

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  • 来源
    《Thin Solid Films》 |2011年第13期|p.4277-4281|共5页
  • 作者

    S. Omeiri; B. Hadjarab; M. Trari;

  • 作者单位

    Centre of Research in Physical and Chemical Analysis (C.RAP.C), BP248, RP 16004 Algiers, Algeria,Laboratory of Storage and Valorization of Renewable Energies (USTHB, Faculty of Chemistry) BP32 Algiers, 16111, Algeria;

    Laboratory of Solid Solutions (USTHB, Faculty of Physic) B.P. 32 Algiers, 16111, Algeria;

    Laboratory of Storage and Valorization of Renewable Energies (USTHB, Faculty of Chemistry) BP32 Algiers, 16111, Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    anodic oxidation; electrochemistry; optoelectronic devices; semiconductors; silver sulphide;

    机译：阳极氧化电化学光电器件;半导体;硫化银;

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