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首页> 外文期刊>Thin Solid Films >Vanadium dioxide thin film with low phase transition temperature deposited on borosilicate glass substrate
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Vanadium dioxide thin film with low phase transition temperature deposited on borosilicate glass substrate

机译：低相变温度的二氧化钒薄膜沉积在硼硅玻璃基板上

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摘要

A nanostructured vanadium dioxide (VO_2) thin film showing a low metal-insulator transition temperature of 30 °C has been fabricated through reactive ion beam sputtering followed by thermal annealing. The thin film was grown on borosilicate glass substrate at the temperature of 280 °C with a Si_3N_4 buffer layer. Both scanning electron microscopy and atomic force microscopy images have been taken to investigate the configuration of VO_2 thin film. The average height of the crystallite is 20 nm and the grain size ranges from 40 nm to 100 nm. The transmittance measured from low to high temperatures also reveals that the film possesses excellent switching property in infrared light at critical transition temperature, with switching efficiency of 52% at 2600 nm. This experiment paves the way of VO_2 thin film's application in smart windows.
机译：通过反应离子束溅射，然后进行热退火，制备了显示出低30℃的金属-绝缘体转变温度的纳米结构二氧化钒（VO_2）薄膜。薄膜在具有Si_3N_4缓冲层的280°C的硼硅酸盐玻璃基板上生长。扫描电子显微镜和原子力显微镜图像均已被用来研究VO_2薄膜的结构。微晶的平均高度为20nm，晶粒尺寸为40nm至100nm。从低温到高温测得的透射率也表明，该膜在临界转变温度下在红外光下具有出色的开关性能，在2600 nm处的开关效率为52％。该实验为VO_2薄膜在智能窗户中的应用铺平了道路。

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  • 来源
    《Thin Solid Films》 |2011年第13期|p.4246-4248|共3页
  • 作者

    Zhangli Huang; Sihai Chen; Boqing Wang; Ying Huang; Nengfu Liu; Jin Xu; Jianjun Lai;

  • 作者单位

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, PR China;

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  • 正文语种 eng
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  • 关键词

    vanadium dioxide thin film; phase transition; borosilicate glass substrate; switch efficiency;

    机译：二氧化钒薄膜;相变硼硅酸盐玻璃基板;开关效率;

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