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Electronic charge transfer in cobalt doped fullerene thin films and effect of energetic ion impacts by x-ray absorption spectroscopy

机译:钴掺杂富勒烯薄膜中的电荷转移和高能离子撞击的X射线吸收光谱分析

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摘要

We report on the electronic charge transfer in cobalt doped tullerene thin hlms by means ot near-edge x-ray-absorption fine structure (NEXAFS) spectroscopy measurement. Co-doped fullerene films were prepared by co-deposition technique and subjected to energetic ion irradiation (120 MeV Au) for possibly alignment or interconnect of randomly distributed metal particles. Polarization dependent NEXAFS spectra revealed the alignment of Co and C atoms along the irradiated ionic path. The structural changes in Co-doped as-deposited and ion irradiated fullerene films were investigated by means of Raman spectroscopy measurements. Downshift of pentagonal pinch mode Ag(2) in Raman spectroscopy indicated the electronic charge transfer from Co atom to fullerene molecules, which is further confirmed by NEXAFS at C K-edge for Co-doped fullerene films.
机译:我们通过近边缘X射线吸收精细结构(NEXAFS)光谱测量的方法报告了钴掺杂的富勒烯薄膜中电子电荷的转移。通过共沉积技术制备共掺杂的富勒烯薄膜,并对其进行高能离子辐照(120 MeV Au),以使无规分布的金属颗粒对准或相互连接。偏振相关的NEXAFS光谱揭示了Co和C原子沿辐射离子路径的排列。通过拉曼光谱测量研究了Co掺杂的沉积和离子辐照的富勒烯薄膜的结构变化。五角形收缩模式Ag(2)在拉曼光谱中的下移表明电子电荷从Co原子转移到富勒烯分子,这对于N掺杂的共掺杂富勒烯薄膜在C K边缘得到了进一步证实。

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  • 来源
    《Thin Solid Films》 |2011年第23期|p.8401-8405|共5页
  • 作者单位

    Nano Analysis Centre, Korea Institute of Science and Technology, Seoul 136-791, South Korea,European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France;

    National Laboratory of Intense Magnetic Reids (LNCMI), INSA, 143, avenue de Rangueil, F-31400 Toulouse, France;

    Nano Analysis Centre, Korea Institute of Science and Technology, Seoul 136-791, South Korea;

    Nano Analysis Centre, Korea Institute of Science and Technology, Seoul 136-791, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    fullerene; composite films; ion beam; raman; NEXAFS;

    机译:富勒烯复合膜;离子束拉曼NEXAFS;

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