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首页> 外文期刊>Thin Solid Films >Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics
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Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

机译：用于大面积柔性电子设备的铟锡氧化物薄膜的远程等离子溅射

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摘要

Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 Ωem and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10~(-4)Ωcm, 3.7 × 10~(-4) Ωcm and 3.5 × 10~(-4)Ωcm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10~(-4) and 4.5 × 10~(-4) Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.
机译：使用远程等离子体溅射系统将具有3.5×10Ωem的电阻率和90％的平均可见光透射率（VLT）的铟锡氧化物（ITO）薄膜反应溅射到A4聚对苯二甲酸乙二酯（PET），玻璃和硅基板上。该系统提供对等离子体密度和目标功率的独立控制，从而可以研究等离子体对ITO特性的影响。在玻璃和硅上进行ITO的表征表明，提高等离子体密度会导致电阻率的降低和ITO薄膜光学带隙的增加。以1.5 kW，2.0 kW和2.5 kW的等离子功率以及优化的氧气流速沉积的样品的比电阻率值分别为3.8×10〜（-4）Ωcm，3.7×10〜（-4）Ωcm和3.5×10〜（- 4）Ωcm，光隙分别为3.48 eV，3.51 eV和3.78 eV。等离子体密度的增加也影响了晶体的织构，VLT从70％增至95％，表明更多的氧气被掺入到了正在生长的薄膜中。结果表明，远程等离子溅射技术可用于在线工艺中，以在PET上生产均匀的ITO涂层，电阻率在3.5×10〜（-4）和4.5×10〜（-4）Ωcm之间。在高达30 cm的基板宽度上，光透射率大于85％。

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  • 来源
    《Thin Solid Films》 |2011年第4期|p.1207-1211|共5页
  • 作者

    A.D. Yeadon; S.J. Wakeham; H.L Brown; MJ. Thwaites; MJ. Whiting; M.A. Baker;

  • 作者单位

    Plasma Quest Ltd, Unit IB Rose Estate, Osborn Way, Hook, Hants, RC27 9UT, UK, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, CU2 7XH, UK;

    Plasma Quest Ltd, Unit IB Rose Estate, Osborn Way, Hook, Hants, RC27 9UT, UK;

    Plasma Quest Ltd, Unit IB Rose Estate, Osborn Way, Hook, Hants, RC27 9UT, UK, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, CU2 7XH, UK;

    Plasma Quest Ltd, Unit IB Rose Estate, Osborn Way, Hook, Hants, RC27 9UT, UK;

    Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, CU2 7XH, UK;

    Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, CU2 7XH, UK;

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  • 正文语种 eng
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  • 关键词

    sputtering; indium tin oxide; ambient; HiTUS; flexible;

    机译：溅射氧化铟锡周围;HiTUS;灵活;

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