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Study on physical properties of indium-doped zinc oxide deposited by spray pyrolysis technique

机译：喷雾热解沉积铟掺杂氧化锌的物理性质研究

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摘要

Transparent conducting indium doped zinc oxide (IZO) thin films have been deposited on soda-lime glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. In this work the substrate temperature was varied between 350 ℃ and 500 ℃. X-ray diffraction pattern reveals that at 350 ℃ dominant peak is (100) orientation. By increasing substrate temperature from 350 ℃ to 450 ℃, sheet resistance decreases, from 302 Ω/□ to 26 Ω/□, then at 500 ℃ increases to 34 Ω/□. In the useful range for deposition (i.e. 450 ℃ to 500 ℃), the orientation of the films was predominantly (002). The lowest sheet resistance (26Ω/□) is obtained at substrate temperature of about 450 ℃ with the transmittance of about 75%. Study of scanning electron microscopy images shows that films deposited at 400 ℃, have grain size as large as 574 nm, while with increasing substrate temperature to 450 ℃, grain size becomes smaller and reaches to a value of about 100 nm with spherical shape. At 500 ℃ grain size value would be around 70 nm with the same spherical shape.
机译：透明导电铟掺杂的氧化锌（IZO）薄膜已通过喷雾热解技术沉积在钠钙玻璃基板上。研究了这些膜的结构，电学和光学性能随基材温度的变化。在这项工作中，基板温度在350℃至500℃之间变化。 X射线衍射图谱表明，在350℃时，主峰为（100）取向。通过将基板温度从350℃增加到450℃，薄层电阻从302Ω/□降低到26Ω/□，然后在500℃时增加到34Ω/□。在沉积的有用范围内（即450℃至500℃），膜的取向主要为（002）。在约450℃的基板温度和约75％的透射率下获得最低的薄层电阻（26Ω/□）。扫描电子显微镜图像的研究表明，在400℃沉积的薄膜的晶粒尺寸最大为574 nm，而随着基板温度升高至450℃，晶粒尺寸变小并达到球形的约100 nm值。在500℃时，相同球形的晶粒尺寸值约为70 nm。

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