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Formation of square matrix pores on Al film utilizing focused ion beam milled indent

机译:利用聚焦离子束铣削压痕在铝膜上形成方孔

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摘要

We successfully fabricated a square pattern of anodic alumina oxide (AAO) template in thin Al film grown on Si substrate utilizing focused ion beam (FIB) milled indent. The pore size and its period of the square matrix were about 50 nm and 100 nm, respectively. We found that the minimum indented depth is required to satisfy the critical electric field which is a vertical component toward downward. In addition, we found that the anodizing voltage plays an important role in determining the pore shape and uniformity. The higher anodizing voltage not only reduces the minimum indent depth that is required to create a matrix array but also improves the uniformity of pore shapes in the matrix array.
机译:我们利用聚焦离子束(FIB)铣削的凹痕成功地在Si衬底上生长的Al薄膜中成功制作了正方形的阳极氧化铝模板(AAO)。正方形基质的孔径和其周期分别为约50nm和100nm。我们发现,需要最小压入深度才能满足临界电场,该临界电场是向下的垂直分量。另外,我们发现阳极氧化电压在确定孔的形状和均匀性方面起着重要作用。较高的阳极氧化电压不仅减小了产生矩阵阵列所需的最小压痕深度,而且还改善了矩阵阵列中孔形状的均匀性。

著录项

  • 来源
    《Thin Solid Films》 |2010年第16期|P.4572-4577|共6页
  • 作者单位

    Sungkyunkwan university Advanced Institute of Nano-Technology, Sungkyunkwan University, Suwon 440-746, South Korea;

    rnSungkyunkwan university Advanced Institute of Nano-Technology, Sungkyunkwan University, Suwon 440-746, South Korea;

    rnInformation and Communication Engineering, Sungkyunkwan University, suwon 440-746, South Korea;

    rnSungkyunkwan university Advanced Institute of Nano-Technology, Sungkyunkwan University, Suwon 440-746, South Korea Information and Communication Engineering, Sungkyunkwan University, suwon 440-746, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    matrix AAO; focused ion beam; Al film; Si substrate;

    机译:矩阵AAO;聚焦离子束铝膜硅基板;

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