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Evidence of p-doping in ZnO films deposited on GaAs

机译：GaAs上沉积的ZnO薄膜中p掺杂的证据

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摘要

Successful p-type ZnO thin films have been reported by depositing it on semi insulating GaAs substrates by Pulsed Laser Deposition (PLD) technique. The PLD samples were subsequently subjected to Rapid Thermal Annealing to achieve the required doped ZnO. X-ray Diffraction, Atomic Force Microscopy and Van der Pauw Hall measurements were performed on the annealed samples and compared with as-deposited ones. The XRD results confirm growth of <002> ZnO along with better crystallinity for the annealed sample. The AFM results reveal that the thin films deposited were highly uniform having very low roughness values. Van der Pauw Hall measurements show a transition from n-type conductivity for as-deposited sample to p-type for annealed samples. The hole concentration and Hall mobility measured were reported to be as high as 4.475 × 10~(20) cm~(-3) and 39.73 cm~2/V-sec respectively. These are probably the highest reported values to date and are encouraging from the point of successful fabrication of efficient ZnO-based optoelectronics devices like LED, laser, photodiodes, etc. in the near future.
机译：据报道，成功的p型ZnO薄膜是通过脉冲激光沉积（PLD）技术将其沉积在半绝缘GaAs衬底上。随后对PLD样品进行快速热退火，以达到所需的掺杂ZnO。对退火后的样品进行X射线衍射，原子力显微镜和Van der Pauw Hall测量，并与沉积后的样品进行比较。 XRD结果证实了<002> ZnO的生长以及退火样品的更好的结晶度。 AFM结果表明，沉积的薄膜是高度均匀的，具有非常低的粗糙度值。 Van der Pauw Hall的测量结果表明，沉积后的样品从n型电导率过渡到退火样品的p型电导率。据报道，测得的空穴浓度和霍尔迁移率分别高达4.475×10〜（20）cm〜（-3）和39.73cm〜2 / V-sec。这些可能是迄今为止报道的最高值，从近期成功制造高效的基于ZnO的光电器件（如LED，激光，光电二极管等）的角度来看，这是令人鼓舞的。

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  • 来源
    《Thin Solid Films》 |2010年第16期|P.4542-4545|共4页
  • 作者

    S. Nagar; rnS. Chakrabarti;

  • 作者单位

    Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai 400076, Maharashtra, India;

    rnCenter for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai 400076, Maharashtra, India;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    ZnO; wide bandgap; p-doping; II-VI semiconductor;

    机译：氧化锌;带隙宽p型掺杂;II-VI半导体;

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