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首页> 外文期刊>Thin Solid Films >Nanoscale study by piezoresponse force microscopy of relaxor 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 and 0.9Pb(Mg_(1/3)Nb_(2/3))O_3-0.1PbTiO_3 thin films grown on platinum and LaNiO_3 electrodes
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Nanoscale study by piezoresponse force microscopy of relaxor 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 and 0.9Pb(Mg_(1/3)Nb_(2/3))O_3-0.1PbTiO_3 thin films grown on platinum and LaNiO_3 electrodes

机译：弛豫器0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3和0.9Pb（Mg_（1 / 3Nb_（2/3））O_3-0.1PbTiO_3的压电响应力显微镜纳米研究在铂和LaNiO_3电极上生长的薄膜

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摘要

Relaxor 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 (70/30 PMN-PT) and 0.9Pb(Mg_(1/3)Nb_(2/3))O_3-0.1PbTiO_3 (90/10 PMN-PT) thin films have been grown by RF-sputtering on platinum (Pt) and lanthanum nickelate (LaNiO_3) bottom electrodes. For both electrodes, macroscopic measurements evidence lower coercive fields, remnant polarizations and piezoelectric coefficients d_(33) for 90/10 PMN-PT films compared to 70/30 PMN-PT films. For both compositions, coercive fields and remnant polarizations are lower for films grown on LaNiO_3 compared to on Pt while piezoelectric coefficients d_(33) are higher. For each electrode and composition, a similar behavior is revealed for electromechanical activity at the nanoscale when measuring local piezoelectric hysteresis loops; on the other hand, the voltages required for switching the domains are the highest for 90/ 10 PMN-PT films grown on LaNiO_3. The existence of large grain boundaries in the films grown on Pt and the presence of local random fields with polar nano-domains for the 90/10 composition could explain the differences measured in domains switching properties at the macroscale and nanoscale levels.
机译：弛豫剂0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3（70/30 PMN-PT）和0.9Pb（Mg_（1/3）Nb_（2/3））O_3-0.1PbTiO_3 （90/10 PMN-PT）薄膜已经通过在铂（Pt）和镍酸镧（LaNiO_3）底部电极上进行射频溅射来生长。对于两个电极，宏观测量表明与70/30 PMN-PT膜相比，90/10 PMN-PT膜的矫顽场，残余极化和压电系数d_（33）更低。对于这两种成分，与在Pt上相比，在LaNiO_3上生长的薄膜的矫顽场和残余极化都较低，而压电系数d_（33）较高。对于每个电极和成分，当测量局部压电滞后回线时，在纳米尺度上显示出类似的机电行为。另一方面，对于在LaNiO_3上生长的90/10 PMN-PT膜，切换域所需的电压最高。在Pt上生长的薄膜中存在较大的晶界，并且对于90/10成分，存在带有极性纳米域的局部随机场，可以解释在宏观和纳米水平上域转换特性所测得的差异。

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  • 来源
    《Thin Solid Films》 |2010年第16期|P.4670-4674|共5页
  • 作者

    M. Detalle; rnA. Ferri; rnA. Da Costa; rnR. Desfeux; rnC. Soyer; rnD. Remiens;

  • 作者单位

    Universite d'Artois, Unite de Catalyse et de Chimie du Solide, CNRS UMR 8181, Faculte des Sciences Jean Perrin, Rue Jean Souvraz, SP 18, 62307 Lens Cedex, France LETI-CFA/GRENOBLE, DIHS LCRF, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    rnZernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands;

    rnUniversite d'Artois, Unite de Catalyse et de Chimie du Solide, CNRS UMR 8181, Faculte des Sciences Jean Perrin, Rue Jean Souvraz, SP 18, 62307 Lens Cedex, France;

    rnUniversite d'Artois, Unite de Catalyse et de Chimie du Solide, CNRS UMR 8181, Faculte des Sciences Jean Perrin, Rue Jean Souvraz, SP 18, 62307 Lens Cedex, France;

    rnInstitut d'Electronique, de Micro electronique et de Nano technologies (IEMN), Departement d'Opto Acousto Electronique (DOAE) - MIMM Team, CNRS UMR 8520, Batiment P3, Cite Scientifique, 59665 Villeneuve d'Ascq Cedex, France;

    rnInstitut d'Electronique, de Micro electronique et de Nano technologies (IEMN), Departement d'Opto Acousto Electronique (DOAE) - MIMM Team, CNRS UMR 8520, Batiment P3, Cite Scientifique, 59665 Villeneuve d'Ascq Cedex, France;

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  • 关键词

    relaxor PMN-PT thin films; nanoscale investigations; atomic force microscopy; piezoelectric effect;

    机译：弛豫PMN-PT薄膜;纳米调查;原子力显微镜压电效应;

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