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首页> 外文期刊>Thin Solid Films >Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition
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Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition

机译：等离子增强化学气相沉积法在低介电常数SiOC（-H）薄膜中Cu扩散行为的研究

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摘要

Carbon doped silicon oxide (SiOCH) thin films deposited using plasma-enhanced chemical vapor deposition (PECVD) are commonly used in multilevel interconnect applications. To enhance the electrical performance, the deposited SiOC(-H) films were annealed in a vacuum at various temperatures ranging from 250 to 450 ℃. A Cu electrode was then deposited using thermal evaporation. The drift rate of Cu~+ ions in the SiOC(-H) films with the Cu/SiOC(-H)/p-Si(100)/Al metal-insulator-semiconductor (MIS) structures after annealing was evaluated by C-V measurements with a flatband shift caused by bias-temperature stress (BTS). The samples were stressed at different temperatures of 150 to 275 ℃ and electric fields up to 1.5 MV/cm to examine the penetration of Cu~+ ions into the SiOC(-H) films. The Cu~+ ion drift diffusion behavior was observed by high-resolution transmission electron microscopy and depth profile analysis of the Auger electron spectra. The drift diffusion experiments suggested that the Cu~+ ion drift rate in the of SiOC(-H) films increased with increasing annealing temperature. A thermal stress and BTS were used to evaluate the impact of Cu penetration on the dielectric properties of the SiOC(-H) films.
机译：使用等离子体增强化学气相沉积（PECVD）沉积的碳掺杂氧化硅（SiOCH）薄膜通常用于多层互连应用中。为了提高电性能，将沉积的SiOC（-H）薄膜在250至450℃的各种温度下的真空中进行退火。然后使用热蒸发沉积Cu电极。通过CV测量来评估具有Cu / SiOC（-H）/ p-Si（100）/ Al金属-绝缘体-半导体（MIS）结构的SiOC（-H）膜中Cu〜+离子的漂移速率由于偏置温度应力（BTS）引起的带平移。在150至275℃的不同温度和高达1.5 MV / cm的电场下对样品施加应力，以检查Cu〜+离子向SiOC（-H）膜中的渗透。通过高分辨率透射电子显微镜和俄歇电子能谱的深度剖面分析观察到了Cu〜+离子漂移扩散行为。漂移扩散实验表明，随着退火温度的升高，SiOC（-H）薄膜中Cu〜+离子的漂移速率增加。使用热应力和BTS来评估Cu渗透对SiOC（-H）薄膜介电性能的影响。

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  • 来源
    《Thin Solid Films》 |2010年第22期|p.6474-6477|共4页
  • 作者

    Chi Kyu Choi; Heang Seuk Lee; R. Navamathavan; Jong-Kwan Woo; Chang Young Kim;

  • 作者单位

    Nano Thin Film Materials laboratory, Department of Physics, Cheju National University, Ara 1 Dong,Jeju 690-756, Republic of Korea;

    rnNano Thin Film Materials laboratory, Department of Physics, Cheju National University, Ara 1 Dong,Jeju 690-756, Republic of Korea;

    rnSemiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Chonju 561-756, Republic of Korea;

    rnNano Thin Film Materials laboratory, Department of Physics, Cheju National University, Ara 1 Dong,Jeju 690-756, Republic of Korea;

    rnNano Thin Film Materials laboratory, Department of Physics, Cheju National University, Ara 1 Dong,Jeju 690-756, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    low-k materials; SiOC(-H) films; PECVD; bias temperature stress; Cu metallization; C-V; AES; TEM;

    机译：低k材料SiOC（-H）膜;PECVD;偏置温度应力铜金属化简历;AES;透射电镜;

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