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首页> 外文期刊>Thin Solid Films >Molecular layer deposition of ZrO_2-based organic-inorganic nanohybrid thin films for organic thin film transistors
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Molecular layer deposition of ZrO_2-based organic-inorganic nanohybrid thin films for organic thin film transistors

机译：用于有机薄膜晶体管的基于ZrO_2的有机无机纳米杂化薄膜的分子层沉积

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Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 ℃ using MLD with repeated sequential adsorptions of C=C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO_2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH_3)_3)_4 and H_2O. The prepared SAOL-ZrO_2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (～16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm~2/V s, operating at - 1 V with an on/off current ratio of ～10~3.
机译：分子层沉积（MLD）技术可用于制备各种有机-无机纳米杂化超晶格。 MLD方法是在真空条件下进行的自控逐层生长过程，与原子层沉积（ALD）方法完全兼容。本文采用MLD法结合ALD法制备了一种新型的有机-无机纳米杂化薄膜。使用MLD在170℃形成自组装有机层（SAOL），并重复顺序吸附C = C终止的烷基硅烷和羟基锆，并进行臭氧活化。使用ALD在Zr（OC（CH（3）_3）_4和H_2O交替发生表面饱和反应的情况下，使用ALD在相同温度下沉积ZrO_2无机纳米层。制备的SAOL-ZrO_2有机-无机纳米杂化薄膜具有良好的机械稳定性，优良的绝缘性能和较高的介电常数k（〜16）。然后将它们用作厚度为23 nm的低电压并五苯薄膜晶体管的电介质，该晶体管的最大场效应迁移率为0.63 cm〜2 / V s，工作于-1 V，开/关电流比为〜10〜3。

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