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Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

机译：低k干法蚀刻后193 nm光刻胶中的化学和结构改性

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摘要

Wet processes are gaining renewed interest for the removal of post-etch photoresist on porous dielectrics in semiconductor manufacturing. However, specifications on material loss and lvalue integrity considerably reduce formulation space for a purely wet-chemical clean. Hence characterization of photoresist degradation by etch is needed to support the selection of wet cleaning chemistries. In this work, the degradation of a DUV (deep ultra-violet) photoresist by a dielectric etch plasma is characterized by spectroscopic as well as by polymer science characterization techniques. Results show that degradation of the DUV photoresist under study does not follow the mechanisms previously proposed for etched DUV photoresist films, but is rather comparable to the degradation of PMMA under low energy radiation. Degradation is more intense in the photoresist top layer, forming a cross-linked crust that is insoluble in organic solvents. Based on FTIR and 'H NMR analysis of isolated crust samples, a cross-linking mechanism is proposed that is based on the reaction between intra-chain radicals and/or between intra-chain radicals and end-chain propagating radicals. Implications for the wet removal of photoresist layers are discussed.
机译：湿法工艺在半导体制造中对于去除多孔电介质上的蚀刻后光致抗蚀剂越来越引起人们的关注。但是，有关材料损失和左值完整性的规范大大减少了纯湿化学清洗的配方空间。因此，需要表征通过蚀刻对光致抗蚀剂的降解以支持湿法清洁化学的选择。在这项工作中，介电蚀刻等离子体对DUV（深紫外）光致抗蚀剂的降解通过光谱以及聚合物科学表征技术来表征。结果表明，正在研究的DUV光致抗蚀剂的降解不遵循先前提出的用于蚀刻DUV光致抗蚀剂膜的机理，而是与低能量辐射下PMMA的降解相当。光致抗蚀剂顶层中的降解更强烈，形成不溶于有机溶剂的交联外壳。基于分离出的地壳样品的FTIR和1 H NMR分析，提出了一种基于链内自由基之间和/或链内自由基与端链增长自由基之间反应的交联机理。讨论了湿法去除光刻胶层的含义。

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