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首页> 外文期刊>Thin Solid Films >Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport
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Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport

机译：近距离气相传输沉积Bi掺杂CdTe薄膜的物理性质研究

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摘要

Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe: Bi crystals grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1 × 10~(17) and 8× 10~(18) cm~(-3), were used in powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90-300 K temperature range and determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out. The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi thin films were determined from electrical, optical and morphological characterization.
机译：通过近空间蒸汽传输方法在玻璃基板上生长了Bi掺杂的碲化镉（CdTe：Bi）薄膜。 CdTe：通过垂直Bridgman方法生长的Bi晶体以粉末形式用于CdTe：Bi晶体的标称Bi浓度在1×10〜（17）和8×10〜（18）cm〜（-3）之间变化：双薄膜沉积。进行了90-300 K温度范围内的暗电导率和光电导率测量，并通过光声光谱法确定了1.0到2.4 eV光谱区域中薄膜的光吸收系数。通过电学，光学和形态学表征，确定了Bi掺杂水平对多晶CdTe：Bi薄膜的晶界势垒高度和其他相关晶界参数的影响。

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  • 来源
    《Thin Solid Films》 |2008年第12期|3818-3823|共6页
  • 作者

    O. Vigil-Galan; E. Sanchez-Meza; J. Sastre-Hernandez; F. Cruz-Gandarilla; E. Marin; G. Contreras-Puente; E. Saucedo; C.M. Ruiz; M. Tufino-Velazquez; A. Calderon;

  • 作者单位

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Centra de Investigation en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico National, 11500 Mexico, D. E, Mexico;

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    Escuela Superior de Fisica y Matematicas, Instituto Politecnico National, 07738 Mexico, D. E, Mexico;

    Centra de Investigation en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico National, 11500 Mexico, D. E, Mexico;

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  • 正文语种 eng
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  • 关键词

    close space vapour transport; cadmium telluride; photoconductivity; photoacoustic spectroscopy; doping;

    机译：近距离空间蒸气传输;碲化镉光电导性光声光谱法;掺杂;

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