Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO_2

M.I. Alonso; M. Garriga; A. Bemardi; A.R. Goni; A.F. Lopeandia; G. Garcia; J. Rodriguez-Viejo; J.L. Labar

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Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO_2

机译：椭圆法研究SiO_2中嵌入非晶Ge薄膜的晶化

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We use spectroscopic ellipsometry to investigate crystallization of amorphous Ge thin films by thermal annealing of SiO_2/a-Ge/SiO_2 trilayer structures. We study the influence of both film thickness and annealing temperature on the effective dielectric functions of the Ge films, which are related to the film micro- and nanostructures. For annealing temperatures below 900 ℃, all films remain continuous and consist of mixtures of amorphous and nanocrystallized Ge. The crystallite sizes can be estimated from the observed energy blueshift of the E_1 interband transition. Samples annealed at 900 ℃ display dielectric function spectra which differ from a bulk-like behavior. This suggests a variation in optical properties which is correlated to formation of discontinuous films of Ge nanocrystals.

机译：我们使用椭圆偏振光谱法研究了通过热退火SiO_2 / a-Ge / SiO_2三层结构对非晶Ge薄膜的结晶。我们研究了薄膜厚度和退火温度对Ge薄膜有效介电功能的影响，这与薄膜的微观和纳米结构有关。对于低于900℃的退火温度，所有膜均保持连续，并且由非晶和纳米晶Ge的混合物组成。可以从观察到的E_1带间跃迁的能量蓝移来估计微晶尺寸。在900℃退火的样品表现出的介电功能谱与块状行为不同。这表明光学性质的变化与Ge纳米晶体的不连续膜的形成有关。

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来源
《Thin Solid Films》 |2008年第12期|4277-4281|共5页
作者
M.I. Alonso; M. Garriga; A. Bemardi; A.R. Goni; A.F. Lopeandia; G. Garcia; J. Rodriguez-Viejo; J.L. Labar;
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作者单位

Institut de Ciencia de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain;

Institut de Ciencia de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain;

Institut de Ciencia de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain;

Institut de Ciencia de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain;

Departament de Fisica, Universitat Autdnoma de Barcelona, 08193 Bellaterra, Spain;

Departament de Fisica, Universitat Autdnoma de Barcelona, 08193 Bellaterra, Spain;

Departament de Fisica, Universitat Autdnoma de Barcelona, 08193 Bellaterra, Spain;

Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest 114 H-1525, Hungary;

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正文语种 eng
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spectroscopic ellipsometry; crystallization of a-Ge thin films; quantum confinement of E_1 transition; Ge nanocrystals;

机译：椭圆偏振光谱法a-Ge薄膜的结晶;E_1跃迁的量子约束;锗纳米晶体;

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Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO_2

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