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首页> 外文期刊>Thin Solid Films >High-gain and low-hysteresis properties of organic inverters with an UV-photo patternable gate dielectrics
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High-gain and low-hysteresis properties of organic inverters with an UV-photo patternable gate dielectrics

机译：具有UV光敏可图案化栅极电介质的有机逆变器的高增益和低磁滞特性

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摘要

Low-hysteresis properties for an organic thin-film transistor (OTFTs) and a high-gain inverter were fabricated using a self-synthesized UV-photo patternable gate dielectric. The hysteresis behavior was not observed in the transfer characteristics of OTFTs or in the voltage transfer characteristics of the organic inverter. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits were characterized by the field effect mobility, the on/off current ratio, threshold voltage (V_(th)), and the gain. The field effect mobility, V_(th) and the on/off currents ratio were 0.03 cm~2/Vs,-3.3 Vand 10~6, respectively. The inverter has very large gain of 32 and matching input and output levels, despite having a positive switch-on voltage and slight hysteresis. From OTFT device and inverter circuit measurements, it was found that the hysteresis behavior was caused by the interface-state charge trapping between the gate dielectric and the pentacene semiconductor layer.
机译：有机薄膜晶体管（OTFT）和高增益逆变器的低磁滞特性是使用自合成的可紫外光图案化的栅极电介质制造的。在OTFT的转移特性或有机逆变器的电压转移特性中未观察到磁滞行为。对于给定的介电层厚度和施加电压，具有反相器电路的并五苯OTFT的特征在于场效应迁移率，开/关电流比，阈值电压（V_（th））和增益。场效应迁移率，V_（th）和开/关电流比分别为0.03 cm〜2 / Vs，-3.3 V和10〜6。尽管具有正的接通电压和轻微的磁滞，但该逆变器具有非常大的32增益以及匹配的输入和输出电平。通过OTFT器件和逆变器电路测量，发现磁滞行为是由栅极电介质和并五苯半导体层之间的界面态电荷陷阱引起的。

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  • 来源
    《Thin Solid Films》 |2008年第12期|4330-4333|共4页
  • 作者

    Sang Chul Lim; Seong Hyun Kim; Gi Heon Kim; Jae Bon Koo; Yong Suk Yang; Jung Hun Lee; Chan Hoe Ku; Yoon-Ho Song;

  • 作者单位

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

    Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    organic thin-film transistors; pentacene; inverter; gate dielectrics; hysteresis;

    机译：有机薄膜晶体管;并五苯;逆变器栅极电介质;磁滞现象;

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