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首页> 外文期刊>Thin Solid Films >Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO_3-Si and poly-Si-SiO_2-Si structures
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Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO_3-Si and poly-Si-SiO_2-Si structures

机译:Al-SiO_3-Si和poly-Si-SiO_2-Si结构中的势垒高度分布,有效接触电势差和平带电压局部值

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摘要

It was previously shown that the effective contact potential difference (φ_(MS)) IN Al-SiO_2-Si metal-oxide-semiconductor structures has a "dome-like" shape of distribution over the Al-gate area. In this paper we show that this shape is due to the distribution of the barrier height at the Al-SiO_2 interface and that the characteristic shape of φ_(MS)(x,y) distribution is reflected in a similar shape of the flat-band voltage V_(FB)(x,y) distribution over the gate area. As opposed to the Al-SiO_2-Si system, we find that in poly-Si-SiO_2-Si structures both the φ_(MS)(x,y) and the V_(FB) (x,y) distributions are practically uniform.
机译:先前已经表明,Al-SiO_2-Si金属氧化物半导体结构中的有效接触电势差(φ_(MS))在Al-栅极区域上具有“圆顶状”分布形状。在本文中,我们表明此形状是由于势垒高度在Al-SiO_2界面处的分布所致,并且φ_(MS)(x,y)分布的特征形状反映在平坦带的相似形状中栅极区域上的电压V_(FB)(x,y)分布。与Al-SiO_2-Si体系相反,我们发现在多晶硅-SiO_2-Si结构中,φ_(MS)(x,y)和V_(FB)(x,y)分布实际上是均匀的。

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