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机译:Si衬底上通过脉冲激光沉积生长的未掺杂ZnO薄膜在低温下的导电效应
School of Electrical Engineering and Computer Science, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15773 Athens, Greece;
School of Electrical Engineering and Computer Science, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15773 Athens, Greece;
Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA;
Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA;
Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA Department of Information and Communication Systems Engineering, University of the Aegean, Karlovasi, 83200 Samos, Greece;
Zinc-oxide; acceptor band; laser ablation; hopping conductivity; Si;
机译:比较使用脉冲激光沉积在r-和c-Al_2O_3衬底上生长的未掺杂ZnO薄膜的结构,光学和电学性质
机译:在Si(100)衬底上通过脉冲激光沉积生长的未掺杂和Ni掺杂的p-ZnO薄膜上的Cr肖特基接触的电特性
机译:通过脉冲激光沉积生长的外延和多晶无掺杂和铝掺杂的ZnO薄膜的电学和光学性质
机译:通过脉冲激光沉积研究在n型和p型(100)Si衬底上生长的未掺杂ZnO膜的导电类型
机译:通过脉冲激光沉积和溶胶-凝胶法控制氧化锌薄膜的电阻率和光学性质。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:通过室温脉冲激光沉积在柔性zeonor塑料基板上生长的高透明度和可再现的纳米晶ZnO和aZO薄膜