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首页> 外文期刊>Thin Solid Films >Electrical conduction effects at low temperatures in undoped ZnO thin films grown by Pulsed Laser Deposition on Si substrates
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Electrical conduction effects at low temperatures in undoped ZnO thin films grown by Pulsed Laser Deposition on Si substrates

机译:Si衬底上通过脉冲激光沉积生长的未掺杂ZnO薄膜在低温下的导电效应

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摘要

The electrical properties of undoped ZnO films grown by Pulsed Laser Deposition on Si substrates at growth temperatures between 150 and 250 ℃ and low O_2 partial pressures, were studied by resistivity and Hall coefficient measurements in the temperature range of 80 to 350 K. We report acceptor band and hopping conduction effects in these ZnO films, for the first time. P-type conduction is found to be dominant in these films for temperatures higher than approximately 235 K, while at temperatures lower than 235 K the films exhibit a conversion from p- to n-type conductivity. The electrical conductivity studies revealed a conduction mechanism by hopping in the acceptor band in the temperature range between 80 and 270 K. For temperatures higher than 270 K a thermally activated behavior, between the native acceptor band (Zn vacancies) and the valence band is dominant. The acceptor activation energy values extracted from the lnp versus T~(-1) curves were found to be of 0.1 eV. The electrical mobility values fall-off rapidly from 90 to 8 cm~2/V s for temperatures below 270 K, providing evidence that a mobility edge exists between transport in the valence band and transport in the acceptor band.
机译:通过在80至350 K的温度范围内的电阻率和霍尔系数测量,研究了在150至250℃的生长温度和低O_2分压下在Si衬底上通过脉冲激光沉积生长的未掺杂ZnO薄膜的电学性质。我们报告了受体这些ZnO薄膜中的能带和跳跃传导效应是第一次。在高于约235 K的温度下,发现这些膜中P型导电占主导地位,而在低于235 K的温度下,该膜表现出从p型到n型导电性的转换。电导率研究揭示了通过在80至270 K之间的温度范围内跳入受体带的传导机理。对于高于270 K的温度,在自然受体带(Zn空位)和价带之间存在热激活行为。从lnp对T〜(-1)曲线中提取的受体活化能值为0.1 eV。对于低于270 K的温度,电迁移率值从90迅速下降到8 cm〜2 / V s,这提供了在价带中的传输和受体带中的传输之间存在迁移率边缘的证据。

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  • 来源
    《Thin Solid Films》 |2008年第12期|4226-4231|共6页
  • 作者单位

    School of Electrical Engineering and Computer Science, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15773 Athens, Greece;

    School of Electrical Engineering and Computer Science, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15773 Athens, Greece;

    Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA;

    Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA;

    Department of Electrical & Computer Engineering, University of Maryland, College Park, Maryland 20742, USA Department of Information and Communication Systems Engineering, University of the Aegean, Karlovasi, 83200 Samos, Greece;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc-oxide; acceptor band; laser ablation; hopping conductivity; Si;

    机译:氧化锌受体带激光烧蚀跳跃电导率硅;

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