...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Influence of contaminations on the performance of thin-film silicon solar cells prepared after in situ reactor plasma cleaning
【24h】

Influence of contaminations on the performance of thin-film silicon solar cells prepared after in situ reactor plasma cleaning

机译：污染对原位反应器等离子体清洗后制备的薄膜硅太阳能电池性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper addresses the influence of the chemical memory effect (CME) of in situ plasma cleaning by using the fluorinated gases on the properties of subsequently deposited thin-film silicon solar cells and discusses methods to avoid or reduce this effect. Secondary ion mass spectrometry (SIMS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) profiles analysis showed a high impurity concentration in the intrinsic (i)-layer of p-i-n solar cells prepared directly after in situ cleaning. With increasing number of cell depositions these contaminations decrease and the solar cell performance recovers to the standard value. Restoring solar cell performance is accompanied by a decrease of contaminants concentration in the i-layer. The intentional variation of the F-content in the i-layer obtained by adding SiF_4 to the process gas mixture during a-Si:H i-layer preparation reveals that for solar cells a fluorine content above 1.5 × 10~(19) cm~(-3) is critical. We applied NF_3 or SF_6+O_2 as cleaning gases and optimized the cleaning procedure. In case of using NF_3 as the cleaning gas, the CME was less pronounced as compared to the SF_6+O_2 case and by additional procedures, like increasing the total gas flow rate during deposition, hydrogen plasma treatment of reaction chamber, the high solar cell quality could be achieved directly after in situ reactor cleaning. Low concentration of impurities in such cells was observed. Also the long-term illumination test (light-soaking for 1000 h, AM 1.5 radiation) shows the same stabilized efficiency as compared to reference cells.
机译：本文探讨了使用氟化气体进行原位等离子体清洗的化学记忆效应（CME）对随后沉积的薄膜硅太阳能电池性能的影响，并讨论了避免或减少这种效应的方法。二次离子质谱（SIMS）和飞行时间二次离子质谱（TOF-SIMS）分析表明，在原位清洗后直接制备的p-i-n太阳能电池的本征（i）层中杂质浓度很高。随着电池沉积数量的增加，这些污染减少，太阳能电池的性能恢复到标准值。恢复太阳能电池的性能会降低i层中污染物的浓度。在a-Si：H i层制备过程中通过向工艺气体混合物中添加SiF_4而获得的i层中F含量的有意变化表明，对于太阳能电池，氟含量超过1.5×10〜（19）cm〜。 （-3）很关键。我们使用NF_3或SF_6 + O_2作为清洁气体，并优化了清洁程序。在使用NF_3作为清洁气体的情况下，与SF_6 + O_2情况相比，CME的效果较差，并且通过其他步骤进行，例如增加沉积过程中的总气体流速，反应室的氢等离子体处理，高太阳能电池质量可以在原位清洗反应器后直接实现。在这种电池中观察到低浓度的杂质。与参考电池相比，长期照明测试（浸泡1000小时，AM 1.5辐射）也显示出相同的稳定效率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号