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首页> 外文期刊>Thin Solid Films >Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices
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Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices

机译：外延生长制备的单晶SiC薄膜及其在微机械装置中的应用

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This paper deals with the fabrication process of single-crystal silicon carbide (SiC) thin-films and its application to microdevice. SiC thin-film was synthesized using molecular beam epitaxy, where single-crystal SiC layer was grown on single-crystal silicon (Si) substrate. Using lithography and etching process, microscopic cantilevers were fabricated. Typical dimensions of the cantilevers were 10-60 urn in length, 10-30 μm in width, typically 180 nm in thickness. Young's modulus estimated from bending test was almost the same with that of bulk material. Finally, an application is demonstrated where nickel was deposited on the cantilever and biomorphic actuation was carried out. The displacement at the tip was about 2 μm when the temperature change was 40 K. The time constant of the step response was about 0.07 s.
机译：本文探讨了单晶碳化硅（SiC）薄膜的制备工艺及其在微器件中的应用。使用分子束外延合成SiC薄膜，其中在单晶硅（Si）衬底上生长单晶SiC层。使用光刻和蚀刻工艺，制造了微观悬臂。悬臂的典型尺寸是长度为10-60，宽度为10-30μm，厚度通常为180 nm。根据弯曲试验估算的杨氏模量与散装材料的杨氏模量几乎相同。最后，证明了一种应用，其中镍沉积在悬臂上并进行了生物形态致动。当温度变化为40 K时，尖端的位移约为2μm。阶跃响应的时间常数约为0.07 s。

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