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首页> 外文期刊>Thin Solid Films >Ruo_2 Doped Sno_2 Nanobipyramids On Si (100) As A Field Emitter
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Ruo_2 Doped Sno_2 Nanobipyramids On Si (100) As A Field Emitter

机译：Si（100）上Ruo_2掺杂的Sno_2纳米双锥体作为场发射体

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摘要

Thin films of RuO_2: SnO_2 nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0.1 μA/ cm2 current density has been found to be 0.2 V/μm. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm~(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of 1 μA is observed to be good. Our field emission results on RuO_2: SnO_2 nanobipyramids indicate that, RuO_2: SnO_2 nanobipyramids are a potential candidate for futuristic field emission based devices.
机译：RuO_2：SnO_2纳米双锥体的薄膜已在硅（100）平面基板上生长，并且已经研究了它们的场发射行为。场发射实验已在平行板配置中进行。在该实验中，发现0.1μA/ cm2电流密度的起始场为0.2 V /μm。 Fowler-Nordheim图显示了典型的半导体非线性特性。场增强因子估计为35,600 cm〜（-1），表明场发射源自发射体的纳米特征。观察到以1μA的预设值记录的电流稳定性良好。我们在RuO_2：SnO_2纳米双锥体上的场发射结果表明，RuO_2：SnO_2纳米双锥体是未来基于场发射的器件的潜在候选者。

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