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Change In Local Atomic And Chemical Bonding Structures Of Ge_2sb_2te_5alloys By Isothermal Heat Treatment

机译:等温热处理改变Ge_2sb_2te_5合金的局部原子和化学键结构

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摘要

In this work, we report evaluation of the atomic-scale phase transformation characteristics in one of the most comprehensively utilized phase change materials today, Ge_2Sb_2Te_5 thin film. The phase transformation of Ge_2Sb_2Te_5 thin film from amorphous to hexagonal structure via fcc structure was confirmed by XRD measurements. The approximate values of optical energy gap are 0.72 and 0.50 eV, with slopes (B~(1/2)) in the extended absorption region of 5.3 × 10~5 and 10 × 10~5 cm~(-1)eV~(-1) for the amorphous and fcc-crystalline structures, respectively. In addition, X-ray photoelectron spectroscopy analysis revealed strengthening of the Te-Te bond as well as weakening of the Ge-Te bond during the amorphous-to-crystalline transition. This trend was also observed in extended X-ray absorption fine structure analysis where the Ge metallic bond lengths in the amorphous, fcc, and hexagonal structures were 0.262, 0.280, and 0.290 nm.
机译:在这项工作中,我们报告了对当今使用最广泛的相变材料之一Ge_2Sb_2Te_5薄膜中原子尺度相变特性的评估。通过XRD测量证实了Ge_2Sb_2Te_5薄膜通过fcc结构从非晶结构转变为六方结构。光能隙的近似值为0.72和0.50 eV,在扩展的吸收区域中的斜率(B〜(1/2))为5.3×10〜5和10×10〜5 cm〜(-1)eV〜( -1)分别用于非晶和fcc晶体结构。此外,X射线光电子能谱分析显示,在非晶态到晶态转变期间,Te-Te键的增强以及Ge-Te键的减弱。在扩展的X射线吸收精细结构分析中也观察到了这种趋势,其中非晶,fcc和六边形结构中的Ge金属键长分别为0.262、0.280和0.290 nm。

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