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Investigation of potential and compositional fluctuations in CuGa_3Se_5 crystals using photoluminescence spectroscopy

机译：使用光致发光光谱研究CuGa_3Se_5晶体的电势和成分波动

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摘要

We studied the photoluminescence (PL) properties of the ordered defect compound CuGa_3Se_5. Different single crystals were grown by the vertical Bridgman method and by the solid phase crystallization method. Their crystal structure and cell parameters were determined by X-ray diffraction. The PL spectra were recorded at T= 10-300 K. Also, laser power dependences were studied. We found an asymmetric PL band at 1.76 eV. PL band shifts towards higher energies with increasing laser power. The shape and properties of this band assure the presence of potential and compositional fluctuations. The influence of both fluctuations on the PL properties of CuGa_3Se_5 is studied and the radiative recombination processes are explained.
机译：我们研究了有序缺陷化合物CuGa_3Se_5的光致发光（PL）特性。通过垂直布里奇曼法和固相结晶法生长不同的单晶。通过X射线衍射确定它们的晶体结构和晶胞参数。在T ＝ 10-300K下记录PL光谱。此外，研究了激光功率依赖性。我们在1.76 eV处发现了不对称PL带。随着激光功率的增加，PL波段向更高的能量移动。该谱带的形状和特性确保存在潜在的和成分波动。研究了两种波动对CuGa_3Se_5的PL性质的影响，并解释了辐射复合过程。

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