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Influence of the reactive N_2 gas flow on the properties of rf-sputtered ZnO thin films

机译：反应性N_2气流对射频溅射ZnO薄膜性能的影响

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Nitrogen (N)-doped ZnO thin films were RF sputtered with different N_2 volume (ranging from 10% to 100%) on sapphire (001) substrates. The influence of N_2 vol.% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N_2 vol.%. The films sputtered with 25 vol.% N_2 showed better crystallinity. The transmittance was decreased with increasing N_2 volume until 25% and was almost constant above 25%. A maximum optical band gap (2.08 eV) obtained for 10 vol.% N_2 decreased with increasing N_2 volume to reach a minimum of 1.53 eV at 100%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N_2 volume to reach a maximum of～3.7×10~(21) atom/cm~3 at 75% but then decreased slightly to 3.42×10~(21) atoms/cm~3. The sign of Hall coefficient confirmed that the films sputtered with ＜ 25 vol.% N_2 possess p-type conductivity which changes to n-type for ＞ 25 vol.% N_2.
机译：在蓝宝石（001）衬底上用不同的N_2体积（范围从10％到100％）RF溅射氮（N）掺杂的ZnO薄膜。通过各种表征技术分析了N_2vol。％对ZnO薄膜性能的影响。 X射线衍射研究表明，薄膜沿优先（002）晶面生长，且结晶度随N_2 vol。％的变化而变化。用25体积％的N_2溅射的膜显示出更好的结晶度。透射率随着N_2体积的增加而降低，直到25％，并且在25％以上几乎保持恒定。随着N_2体积的增加，N_2体积分数为10％时获得的最大光学带隙（2.08 eV）减小，在100％时达到1.53 eV的最小值。组成分析证实了氮已被掺入ZnO薄膜中，其浓度随着N_2体积的增加而增加，最大达到7．5％～～ 3.7×10〜（21）atom / cm〜3，然后略微下降至3.42×10〜。 （21）原子/ cm〜3。霍尔系数的符号证实，溅射出的N_2小于25％（体积）的薄膜具有p型电导率，当N_2大于25％（体积）时，薄膜变为n型。

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