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Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers

机译：纳米氧化铟锡层的电，光学和形态学性质

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摘要

Porous layers were prepared from DEGUSSA's ITO (In_2O_3:Sn) nanoparticle dispersion by doctor blading followed by annealing in air. We investigated the influence of various annealing parameters on electrical, optical and morphological thin film properties.rnConductance rises with increasing annealing temperature and time by more than three orders of magnitude up to 44 Ω~(-1) cm~(-1). Besides this we found an abrupt decrease in free charge carrier concentration above a critical annealing temperature of 250 ℃, which leads to a step in conductance curve. In spite of particle growing during annealing no decrease in porosity was observed and in opposite to compact material, nanoparticle layers do not exhibit an appreciable shrinkage below recrystallisation temperature. These both indicate a densification hindering particle pinning effect, which is believed to be currently the main obstruction to achieve higher electrical conductivities.
机译：多孔层是由DEGUSSA的ITO（In_2O_3：Sn）纳米颗粒分散体通过刮刀刮涂，然后在空气中退火制成的。我们研究了各种退火参数对薄膜的电学，光学和形貌特性的影响。随着退火温度和退火时间的增加，电导率增加了三个数量级以上，达到44Ω〜（-1）cm〜（-1）。除此之外，我们发现在高于250℃的临界退火温度时，自由载流子浓度突然降低，这导致电导曲线出现阶跃。尽管在退火过程中颗粒生长，但未观察到孔隙率降低，并且与致密材料相反，纳米颗粒层在重结晶温度以下并未表现出明显的收缩。这些都表明致密化阻碍了粒子的钉扎效应，据信这是目前获得更高电导率的主要障碍。

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