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首页> 外文期刊>Thin Solid Films >Localisation of the p-n junction in poly-silicon thin-film diodes on glass by high-resolution cross-sectional electron-beam induced current imaging
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Localisation of the p-n junction in poly-silicon thin-film diodes on glass by high-resolution cross-sectional electron-beam induced current imaging

机译：通过高分辨率横截面电子束感应电流成像对玻璃上的多晶硅薄膜二极管中的p-n结进行定位

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摘要

High-resolution scanning electron microscope, focused ion beam (FIB) microscope, and electron-beam induced current (EBIC) images are taken on large-grained polycrystalline silicon thin-film diodes on glass. To aid understanding of the plan-view EBIC images obtained, trenches are cut into the diodes in the FIB microscope, and the p-n junction then located and examined in the diode's cross section using high-resolution EBIC. Diffusion of aluminium atoms from the heavily doped emitter region into the base region of the diode along grain boundaries during material fabrication is found to have locally altered the junction's location and therefore alters the EBIC signal in these regions. Using this method allows a fast and easy location of the p-n junction in these diodes, in addition to aiding in the identification of unusual junction deviations which complicate the interpretation of plan-view EBIC images.
机译：在玻璃上的大晶粒多晶硅薄膜二极管上拍摄高分辨率扫描电子显微镜，聚焦离子束（FIB）显微镜和电子束感应电流（EBIC）图像。为了帮助理解所获得的平面EBIC图像，在FIB显微镜中将沟槽切入二极管，然后使用高分辨率EBIC在二极管的横截面中定位和检查p-n结。发现在材料制造过程中，铝原子从重掺杂发射极区沿晶粒边界扩散到二极管的基极区中，已局部改变了结的位置，因此改变了这些区域中的EBIC信号。使用这种方法，除了可以帮助识别异常的结偏差外，还可以快速，轻松地在这些二极管中定位p-n结，这使平面EBIC图像的解释变得复杂。

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