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首页> 外文期刊>Thin Solid Films >Electrical, photoelectrical properties and crystal structure of A~2B~6 films, grown by laser sputtering
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Electrical, photoelectrical properties and crystal structure of A~2B~6 films, grown by laser sputtering

机译：激光溅射生长的A〜2B〜6薄膜的电，光电性能和晶体结构

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摘要

The new static vacuum system with laser-getter evacuation is proposed. The Cr_xHg_(1-x)Se (x=0.1; 0.2) and Cd_xHg_(1-x)Se (x=0.25; 0.6) thin films are prepared by pulsed laser sputtering in static vacuum and their structural properties are studied as a function of substrate temperature. It is shown that at substrate temperature 360 K the obtained films are polycrystalline, and at 380-390 K they are textured, offering mobilities ～10~4 cm~2/V·s for Cr_xHg_(1-x)Se and ～10~3 cm~2/V·s for Cd_xHg_(1-x)Se. For the Cr_xHg_(1-x)Se films on the temperature dependence in the region of 200 K an increase in the Hall coefficient is observed which is attributable to a change in Cr charge state. Laser recrystallization method was also used to obtain CdTe and Cd_(0.8)Mn_(0.2)Te based barrier structures in static vacuum, exhibiting rectifying properties with rectifying factor k=10~4 and 30, respectively.
机译：提出了一种新型的带有真空吸气器的静态真空系统。通过在静态真空中通过脉冲激光溅射制备Cr_xHg_（1-x）Se（x = 0.1; 0.2）和Cd_xHg_（1-x）Se（x = 0.25; 0.6）薄膜，并研究其结构性质作为函数基板温度。结果表明，在衬底温度为360 K时，所获得的薄膜是多晶的；在380-390 K时，它们得到了织构化，对Cr_xHg_（1-x）Se和〜10〜 Cd_xHg_（1-x）Se为3 cm〜2 / V·s。对于在200 K范围内的温度依赖性的Cr_xHg_（1-x）Se薄膜，观察到霍尔系数增加，这归因于Cr电荷状态的变化。还采用激光重结晶法在静态真空条件下获得了基于CdTe和Cd_（0.8）Mn_（0.2）Te的势垒结构，其整流性能分别为k = 10〜4和30。

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