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首页> 外文期刊>Thin Solid Films >Impacts of phosphorus and aluminum gettering with porous silicon damage for p-type Czochralski silicon used in solar cells technology
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Impacts of phosphorus and aluminum gettering with porous silicon damage for p-type Czochralski silicon used in solar cells technology

机译：磷和铝吸气剂对多孔硅的破坏对太阳能电池技术中使用的p型切克劳斯基硅的影响

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摘要

In this paper, porous silicon damage (PSD) is introduced like a simple sequence for efficient extrinsic gettering schemes. The technique consists to create a sacrificial porous silicon layer on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first group, thin aluminium layers ( ≥ 1 μm) are thermally evaporated followed by photo-thermal annealing at 700 and 800℃, under N_2 atmosphere. In the second group, phosphorous is continually diffused during heating at one of several temperatures ranging between 750 and 950℃ for 1 h in a solid phase from POCl_3 solution, in N_2/O_2 ambient. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering equal to 900℃ yielding a hall mobility of about 982 cm~2 V~(-1) s~(-1). FTIR investigations show an increase of interstitial oxygen enhancing the precipitation phenomena and proving that extrinsic and intrinsic gettering are in work at the same time. However, in the case of aluminum gettering, there isn't a gettering limit in the as mentioned temperature range. Moreover, silicon solar cells are processed to clarify this effect.
机译：在本文中，引入了多孔硅损伤（PSD），就像简单的序列一样，可以有效地进行外在吸杂。该技术包括在具有随机半球形空隙的硅衬底的两侧上形成牺牲多孔硅层。然后，处理两种主要的样品类型。在第一组中，将铝薄层（≥1μm）热蒸发，然后在N_2气氛下于700和800℃进行光热退火。在第二组中，磷在N_2 / O_2环境中以POCl_3溶液在固相中于750至950℃的几种温度之一加热期间连续扩散。霍尔效应和Van Der Pauw方法证明，在磷吸收剂等于900℃的情况下，存在一个最佳温度，产生的霍尔迁移率约为982 cm〜2 V〜（-1）s〜（-1）。 FTIR研究表明，间隙氧的增加增强了沉淀现象，并证明了外部吸气和内部吸气同时起作用。但是，对于铝吸气剂，在上述温度范围内没有吸气极限。此外，对硅太阳能电池进行了处理以阐明这种效果。

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