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Link between enhanced carrier mobilities and DOS profiles in a-Si:H

机译:a-Si:H中增强的载具流动性和DOS轮廓之间的链接

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摘要

High carrier mobilities have been reported in a-Si:H samples prepared at high deposition rate and high substrate temperature in an expanding thermal plasma (ETP). Those mobilities were found to be field independent, and subsequent analysis showed that tail-state distributions with a steeper than exponential decrease are required to account for this field independence. Such steeper profile implies an increased ratio of shallow to deep states and, given that the shallow states dominate the carrier mobility, this fact might explain the observed enhanced mobility. Through the use of analytical expressions for the time-of-flight transients, the circumstances whereby the high, field-independent mobility can be achieved are explored. It is found that a prominent feature close to the mobility edge is required to account for the observations.
机译:在膨胀热等离子体(ETP)中以高沉积速率和高衬底温度制备的a-Si:H样品中已报道了高载流子迁移率。发现这些迁移率是场无关的,随后的分析表明,需要尾态分布比指数减小的幅度陡峭,才能说明这种场无关性。这种较陡峭的轮廓意味着浅状态与深状态的比率增加,并且鉴于浅状态占主导地位的载流子迁移率,这一事实可以解释观察到的增强的迁移率。通过将分析表达式用于飞行时间瞬变,探索了可以实现高的,与场无关的迁移率的情况。发现需要接近移动性边缘的突出特征来解释观察。

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