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首页> 外文期刊>Thin Solid Films >Extraction of features from 2-d laterally sub-micron resolved photoluminescence in Cu(In,Ga)Se_2 absorbers by Fourier transforms and Minkowski-operations
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Extraction of features from 2-d laterally sub-micron resolved photoluminescence in Cu(In,Ga)Se_2 absorbers by Fourier transforms and Minkowski-operations

机译：通过傅立叶变换和Minkowski运算从Cu（In，Ga）Se_2吸收体中的二维横向亚微米分辨光致发光中提取特征

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摘要

Structural and topological properties of Cu(In,Ga)Se_2 (CIGSe) thin films sandwiched in multilayer structures for photovoltaic heterodiodes show significant lateral variations obviously introduced by polycrystallinity. These variations are accompanied by lateral fluctuations in optoelectronic properties such as recombination rates and minority life times emerging e.g. in laterally resolved photoluminescence (PL) and according splitting of quasi-Fermi energies and showing patterns in the several micron-regime (2-8 μm) that by far exceed typical grain sizes of 1 μm. For the extraction of features from Cu(Ga,In)Se_2 absorbers with different Ga admixtures and for their visualization we have applied 2D Fourier transforms and erosion/ dilatation Minkowski-operations (opening functions) which provide insight into size and shape of lateral patterns, and into frequencies of occurrence and distribution of characteristic features. We demonstrate that topological properties (AFM-contours) and optical reflection mainly governed by the topological contours in typical scan-regimes of (50 μm)~2 contain data that are fairly statistically representative for the entire sample, whereas for larger features such as PL-yields within Ga contents of (30-75)% the necessary size of scan regimes amounts at least to (300 μm)~2. For a sound analysis and a potential subsequent optimization of such polycrystalline solids, what kind ever be the type of study, like optical, electronic, or transport measurements, a micron-size resolution seems to be unavoidable, and furthermore, a minimum appropriate size of scan regimes has to be met in order to get relevant representative data.
机译：夹在多层结构中的Cu（In，Ga）Se_2（CIGSe）薄膜的结构和拓扑特性用于光电异质二极管显示出明显的多晶性引起的明显横向变化。这些变化伴随着光电特性的侧向波动，例如复合率和出现的少数族裔寿命。在横向分辨的光致发光（PL）中，并根据准费米能量的分裂，显示出几个微米级（2-8μm）的图案，这些图案远远超过了典型的1μm晶粒尺寸。为了从具有不同Ga掺合物的Cu（Ga，In）Se_2吸收剂中提取特征并对其进行可视化，我们应用了二维傅立叶变换和腐蚀/膨胀Minkowski操作（打开函数），可洞悉横向图案的大小和形状，以及特征特征出现和分布的频率。我们证明，在（50μm）〜2的典型扫描条件下，主要由拓扑轮廓控制的拓扑属性（AFM轮廓）和光反射包含的数据在整个样本中具有统计学上的代表性，而对于较大的特征（如PL） -Ga含量在（30-75）％扫描范围内所需的扫描方案的大小至少为（300μm）〜2。为了对此类多晶固体进行合理的分析和可能的后续优化，无论是哪种类型的研究（如光学，电子或传输测量），似乎都不可避免地需要微米大小的分辨率，此外，最小的合适尺寸为为了获得相关的代表性数据，必须满足扫描制度。

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