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Thin-film photo-catalytic TiO2 phase prepared by magnetron sputtering deposition, plasma ion implantation and metal vapor vacuum arc source

机译:磁控溅射沉积,等离子体离子注入和金属蒸气真空电弧源制备的薄膜光催化TiO2相

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This study utilizes three methods, magnetron sputtering deposition (MSD), plasma ion implantation (PIII), and metal vapor vacuum arc (MeVVA), to prepare a thin-film TiO2. The formation of stoichiometrical TiO2-polymorphs as a layer is regularly relevant to the characteristic of the photo-catalytic effect. TiO2-polymorphs created at the outermost surface and initiated by efficient photons are still capable to produce superficial hydroxyl groups for subsequent photo-catalytic reactions. The MSD-treated surface with the majority of TiO2-anatase (101) surface is presently photo-catalytic. The PIII or MeVVA treatment results in an ion-implanted layer of different Ti/O ratios along with the detecting depths, whereas the Ti and 0 elements in TiO2 phase at the outermost surface of the layer can be distinguished. Although the PIII- or MeVVA-treated surface is relatively insignificant in photo-catalytic reactions assessed by water droplet contact angle, the consumption of methylene blue in water and antibacterial test, it is still potential to adjust their surface chemistry by improving the quality of the ion-implanted layer, roughening the contact surface area, and increasing the efficiency to regenerate the photo-catalytic reactions. In addition, the ion implantation methods do not alter the size and dimension of a substrate that is a great advantage to employ them for various advanced applications. (c) 2005 Elsevier B.V. All rights reserved.
机译:这项研究利用磁控溅射沉积(MSD),等离子体离子注入(PIII)和金属蒸气真空电弧(MeVVA)这三种方法制备了TiO2薄膜。一层化学计量的TiO2-多晶型物的形成通常与光催化作用的特性有关。在最外层表面产生并由有效光子引发的TiO2-多晶型物仍然能够产生表面羟基,用于随后的光催化反应。目前,大多数TiO2-锐钛矿(101)表面经过MSD处理的表面是光催化的。 PIII或MeVVA处理导致离子注入层具有不同的Ti / O比以及检测深度,而可以区分该层最外层的TiO2相中的Ti和0元素。尽管PIII或MeVVA处理的表面在通过水滴接触角,亚甲基蓝在水中的消耗量和抗菌测试评估的光催化反应中相对微不足道,但仍可能通过改善水的质量来调节其表面化学性质。离子注入层,使接触表面积变粗糙,并提高了再生光催化反应的效率。另外,离子注入方法不会改变基板的尺寸和尺寸,这对于将其用于各种先进应用具有很大的优势。 (c)2005 Elsevier B.V.保留所有权利。

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