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Improving the conductance of ZnO thin films by doping with Ti

机译：掺钛提高ZnO薄膜的电导率

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The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78 X 10~(-2) Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.
机译：使用磁控管共溅射工艺在氧气和氩气的混合物中将掺杂Ti的ZnO膜沉积到Corning 7059玻璃基板上。实验结果表明，当施加的目标功率低于300 W时，沉积速率随Ti目标功率（DC）线性增加。在研究范围内仅出现（002）X射线衍射2θ峰。当Ti目标功率超过250 W时，钛原子有效地掺入氧化锌膜中是很明显的。测得ZnO膜中钛的原子百分比分别为1.33％和2.51％，分别对应于250 W和300 W Ti目标功率。 。未掺杂的ZnO薄膜的电阻率很高，当掺入2.5 at。％的Ti时，电阻率降低到3.78 X 10〜（-2）Ωcm。所有氧化锌膜在400-700nm范围内具有70-80％的透射率。光学能隙随着ZnO膜中Ti的增加而增加。

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