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Stress measurement and stress relaxation during magnetron sputter deposition of cubic boron nitride thin films

机译：立方氮化硼薄膜磁控溅射沉积过程中的应力测量和应力松弛

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摘要

Dynamic in situ analysis of stress and film thickness provide fast and more physical information on growth and stress evolution in cBN layers than integrating (ex situ) methods. Especially, features of the layered structure of boron nitride films, like the evolution of instantaneous stress and growth rates during deposition can be resolved by in situ methods. This work is concerned with dynamic in-situ stress measurement by means of cantilever bending during magnetron sputter deposition of cBN thin films. Laser deflection in combination with in situ ellipsometry is used to determine the instantaneous stress of the films. The results show in agreement with results that were obtained previously from ion beam assisted deposition (IBAD), that the hBN and cBN layers exhibit different levels of stress under constant deposition conditions. The stress increases from less than -4 GPa to very high values (-10 GPa) after the coalescence of the cBN nuclei. Therefore, it is possible to establish the point of cBN nucleation instantly. A simultaneous medium energy ion bombardment is used for stress relaxation during film deposition. A modified substrate bias voltage, combining negative high and low voltage pulses, is used to enable an ion bombardment of the growing film with energies up to 8 keV. In this way, cBN films with a stress as low as -1.7 GPa could be produced without destroying the sp~3-bonds significantly.
机译：与集成（非原位）方法相比，应力和薄膜厚度的动态原位分析可提供有关cBN层中生长和应力演变的快速且更多的物理信息。特别地，可以通过原位方法解决氮化硼膜的层状结构的特征，例如沉积期间的瞬时应力和生长速率的演变。这项工作涉及在cBN薄膜的磁控溅射沉积过程中通过悬臂弯曲进行动态原位应力测量。激光偏转与原位椭偏仪结合使用来确定薄膜的瞬时应力。结果表明，与先前从离子束辅助沉积（IBAD）获得的结果一致，hBN和cBN层在恒定沉积条件下表现出不同的应力水平。 cBN核聚结后，应力从小于-4 GPa增加到非常高的值（-10 GPa）。因此，可以立即确定cBN成核的点。同时进行的中能离子轰击用于在膜沉积期间缓解应力。修改后的衬底偏置电压结合了负的高压脉冲和低压脉冲，可用于对能量高达8 keV的生长膜进行离子轰击。以此方式，可以产生应力低至-1.7GPa的cBN膜，而不会显着破坏sp〜3-键。

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