...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Interface of ultrathin HfO_2 films deposited by UV-photo-CVD
【24h】

Interface of ultrathin HfO_2 films deposited by UV-photo-CVD

机译：紫外光化学气相沉积法沉积HfO_2超薄膜的界面

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report in this article the deposition of ultra-thin HfO_2 films on silicon substrate at 300-450 ℃ by photo-induced CVD using 222 nm excimer lamps. As-deposited films from 2.5 to 10 nm in thickness with refractive indices from 1.60 to 1.85 were grown. The deposition rate measured by ellipsometry was found to be 3 nm/min at a temperature of 400 ℃. XRD showed that as-deposited HfO_2 films were basically amorphous. Investigation of the interfacial layer by XPS and TEM reveals that thickness of the interfacial SiO_2 layer slightly increases with the UV-annealing time and UV annealing can convert suboxide at interface into stoichiometric SiO_2, leading to improved interfacial quality. Fourier transform infrared spectroscopy (FTIR), revealed that Hf-O absorption in the photo-CVD deposited HfO_2 films is quite different at various deposition parameters. When compared to similar studies performed previously in zirconium, titanium and tantalum oxides, the interface layer of HfO_2 is generally thinner than that of other materials. UV annealing can convert a suboxide at interface between the HfO_2 and Si into stoichiometric SiO_2, leading to improved interfacial quality. The thickness of the interface layer (silicon oxide or hafnium silicate) decreases with increasing thickness of the top HfO_2 layers.
机译：我们在本文中报道了使用222 nm准分子灯通过光诱导CVD在300-450℃下在硅衬底上沉积超薄HfO_2膜的过程。生长厚度为2.5至10nm，折射率为1.60至1.85的沉积膜。通过椭圆光度法测量的沉积速率在400℃的温度下为3 nm / min。 XRD表明，沉积的HfO_2薄膜基本上是非晶态的。通过XPS和TEM对界面层的研究表明，界面SiO_2层的厚度随紫外线退火时间的增加而略有增加，紫外线退火可以将界面处的过氧化物转化为化学计量的SiO_2，从而改善了界面质量。傅里叶变换红外光谱（FTIR）表明，在光化学气相沉积的HfO_2薄膜中，在各种沉积参数下，Hf-O的吸收差异很大。与以前在锆，钛和钽氧化物中进行的类似研究相比，HfO_2的界面层通常比其他材料的界面层薄。 UV退火可以将HfO_2和Si之间的界面处的低价氧化物转化为化学计量的SiO_2，从而改善界面质量。界面层（氧化硅或硅酸ha）的厚度随着顶部HfO_2层厚度的增加而减小。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号