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首页> 外文期刊>Thin Solid Films >Laser assisted integrated processing of SiGeC films on silicon
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Laser assisted integrated processing of SiGeC films on silicon

机译：硅上SiGeC膜的激光辅助集成处理

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摘要

An integrated laser assisted process using a commercial ArF-Excimer Laser has been used for producing thin amorphous hydrogenated silicon-germanium-carbon (a-SiGeC:H) films on 3-inch Si(100) wafers and for inducing the heteroepitaxial growth of a SiGeC alloy in selected regions of the wafer. The process combines two established laser assisted techniques: laser induced chemical vapour deposition (LCVD) in parallel configuration for growing the a-SiGeC:H coatings at a relatively low substrate temperature of 250 ℃ and pulsed laser induced epitaxy (PLIE) for modifying their structure and composition through laser induced rapid melt/solidification cycles of both, the coating and part of the underlying crystalline Si-wafer. Compositional and morphological properties of the uniform LCVD grown a-SiGeC:H films as well as of the alloys obtained after the PLIE process have been controlled by several analytical techniques in order to study the laser assisted process and the influence of the melt/ solidification cycles on alloy composition and microstructure.
机译：使用商业ArF准分子激光器的集成激光辅助工艺已用于在3英寸Si（100）晶片上生产非晶硅氢化硅锗碳（a-SiGeC：H）薄膜，并诱导硅的异质外延生长晶片的选定区域中的SiGeC合金。该工艺结合了两种已建立的激光辅助技术：平行配置的激光诱导化学气相沉积（LCVD），用于在250℃的较低基板温度下生长a-SiGeC：H涂层；以及脉冲激光诱导外延（PLIE），用于修改其结构通过激光诱导的涂层和部分下层结晶硅晶圆的快速熔化/固化循环来形成合金。为了研究激光辅助工艺以及熔体/凝固周期的影响，已经通过几种分析技术控制了均匀的LCVD生长的a-SiGeC：H薄膜以及在PLIE工艺之后获得的合金的组成和形态学特性合金成分和显微组织。

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